FDR8305N Todos los transistores

 

FDR8305N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDR8305N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SUPERSOT8
 

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FDR8305N datasheet

 ..1. Size:162K  fairchild semi
 fdr8305n.pdf pdf_icon

FDR8305N

November 1999 FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced 4.5 A, 20 V. RDS(ON) = 0.022 @ VGS = 4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.028 @ VGS = 2.5 V. process that has been especially tailored to minimize the on-state resis

 8.1. Size:112K  fairchild semi
 fdr8308p.pdf pdf_icon

FDR8305N

November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs -3.2 A, -20 V. RDS(ON) = 0.050 @ VGS = -4.5 V, have been designed to provide a low profile, small footprint RDS(ON) = 0.070 @ VGS = -2.5 V. alternative to industry standard SO-8 little foot type product. Low gate char

 9.1. Size:79K  fairchild semi
 fdr836p.pdf pdf_icon

FDR8305N

April 1999 FDR836P P-Channel 2.5V Specified MOSFET General Description Features SuperSOTTM -8 P-Channel enhancement mode power -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V field effect transistors are produced using Fairchild s RDS(ON) = 0.040 W @ VGS = -2.5 V proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini- H

 9.2. Size:204K  fairchild semi
 fdr838p.pdf pdf_icon

FDR8305N

March 1999 FDR838P P-Channel 2.5V Specified PowerTrenchTM MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced -8 A, -20 V. RDS(ON) = 0.017 @ VGS = -4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.024 @ VGS = -2.5 V process that has been especially tailored to minimize the on-state resistance and yet maintain low g

MOSTRAR MÁS

Otros transistores... FDP603AL , FDP6670AL , FDP7030BL , FDP7030L , FDP7045L , FDP8030L , FDR4410 , FDR4420A , IRLZ44N , FDR8308P , FDR836P , FDR838P , FDR8508P , FDR856P , FDR858P , FDS3570 , FDS3580 .

 

 
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