FDR8305N Specs and Replacement

Type Designator: FDR8305N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SUPERSOT8

FDR8305N substitution

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FDR8305N datasheet

 ..1. Size:162K  fairchild semi
 fdr8305n.pdf pdf_icon

FDR8305N

November 1999 FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced 4.5 A, 20 V. RDS(ON) = 0.022 @ VGS = 4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.028 @ VGS = 2.5 V. process that has been especially tailored to minimize the on-state resis... See More ⇒

 8.1. Size:112K  fairchild semi
 fdr8308p.pdf pdf_icon

FDR8305N

November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs -3.2 A, -20 V. RDS(ON) = 0.050 @ VGS = -4.5 V, have been designed to provide a low profile, small footprint RDS(ON) = 0.070 @ VGS = -2.5 V. alternative to industry standard SO-8 little foot type product. Low gate char... See More ⇒

 9.1. Size:79K  fairchild semi
 fdr836p.pdf pdf_icon

FDR8305N

April 1999 FDR836P P-Channel 2.5V Specified MOSFET General Description Features SuperSOTTM -8 P-Channel enhancement mode power -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V field effect transistors are produced using Fairchild s RDS(ON) = 0.040 W @ VGS = -2.5 V proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini- H... See More ⇒

 9.2. Size:204K  fairchild semi
 fdr838p.pdf pdf_icon

FDR8305N

March 1999 FDR838P P-Channel 2.5V Specified PowerTrenchTM MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced -8 A, -20 V. RDS(ON) = 0.017 @ VGS = -4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.024 @ VGS = -2.5 V process that has been especially tailored to minimize the on-state resistance and yet maintain low g... See More ⇒

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Detailed specifications: FDP603AL, FDP6670AL, FDP7030BL, FDP7030L, FDP7045L, FDP8030L, FDR4410, FDR4420A, IRLZ44N, FDR8308P, FDR836P, FDR838P, FDR8508P, FDR856P, FDR858P, FDS3570, FDS3580

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