All MOSFET. FDR8305N Datasheet

 

FDR8305N MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDR8305N
   Marking Code: .8305
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.2 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SUPERSOT8

 FDR8305N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDR8305N Datasheet (PDF)

 ..1. Size:162K  fairchild semi
 fdr8305n.pdf

FDR8305N FDR8305N

November 1999FDR8305NDual N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThese N-Channel 2.5V specified MOSFETs are produced 4.5 A, 20 V. RDS(ON) = 0.022 @ VGS = 4.5 Vusing Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.028 @ VGS = 2.5 V.process that has been especially tailored to minimize theon-state resis

 8.1. Size:112K  fairchild semi
 fdr8308p.pdf

FDR8305N FDR8305N

November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description FeaturesThe SuperSOT-8 family of P-Channel Logic Level MOSFETs-3.2 A, -20 V. RDS(ON) = 0.050 @ VGS = -4.5 V,have been designed to provide a low profile, small footprint RDS(ON) = 0.070 @ VGS = -2.5 V. alternative to industry standard SO-8 little foot type product.Low gate char

 9.1. Size:79K  fairchild semi
 fdr836p.pdf

FDR8305N FDR8305N

April 1999FDR836PP-Channel 2.5V Specified MOSFETGeneral Description FeaturesSuperSOTTM -8 P-Channel enhancement mode power -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 Vfield effect transistors are produced using FairchildsRDS(ON) = 0.040 W @ VGS = -2.5 Vproprietary, high cell density, DMOS technology. Thisvery high density process is especially tailored to mini- H

 9.2. Size:204K  fairchild semi
 fdr838p.pdf

FDR8305N FDR8305N

March 1999FDR838PP-Channel 2.5V Specified PowerTrenchTM MOSFETFeaturesGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced -8 A, -20 V. RDS(ON) = 0.017 @ VGS = -4.5 Vusing Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.024 @ VGS = -2.5 Vprocess that has been especially tailored to minimize theon-state resistance and yet maintain low g

Datasheet: FDP603AL , FDP6670AL , FDP7030BL , FDP7030L , FDP7045L , FDP8030L , FDR4410 , FDR4420A , P55NF06 , FDR8308P , FDR836P , FDR838P , FDR8508P , FDR856P , FDR858P , FDS3570 , FDS3580 .

 

 
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