KHB1D9N60D Todos los transistores

 

KHB1D9N60D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KHB1D9N60D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 45.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.8 Ohm
   Paquete / Cubierta: DPAK
     - Selección de transistores por parámetros

 

KHB1D9N60D Datasheet (PDF)

 ..1. Size:964K  kec
khb1d9n60d i.pdf pdf_icon

KHB1D9N60D

KHB1D9N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D9N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for switching modeLC D_A 6.60 + 0.20_B 6.10 + 0.20power sup

 9.1. Size:1023K  kec
khb1d0n60i.pdf pdf_icon

KHB1D9N60D

KHB1D0N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D0N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS= 600V, ID= 1.0A

 9.2. Size:957K  kec
khb1d0n60d i.pdf pdf_icon

KHB1D9N60D

KHB1D0N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D0N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20switching mode powe

 9.3. Size:412K  kec
khb1d0n70g.pdf pdf_icon

KHB1D9N60D

KHB1D0N70GSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastB Cswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for switch mode powersupplies and low power battery chargers.N DIM MILLIMETERSA 4.70 MAXEKB

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: QM02N65U | PHD55N03LTA | QM0007G | IXFM13N80 | 2SK1925 | WFP3205T | FQD10N20LTM

 

 
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