Справочник MOSFET. KHB1D9N60D

 

KHB1D9N60D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: KHB1D9N60D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 44 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 10.9 nC
   trⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 45.7 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.8 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для KHB1D9N60D

 

 

KHB1D9N60D Datasheet (PDF)

 ..1. Size:964K  kec
 khb1d9n60d i.pdf

KHB1D9N60D KHB1D9N60D

KHB1D9N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D9N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for switching modeLC D_A 6.60 + 0.20_B 6.10 + 0.20power sup

 9.1. Size:1023K  kec
 khb1d0n60i.pdf

KHB1D9N60D KHB1D9N60D

KHB1D0N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D0N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS= 600V, ID= 1.0A

 9.2. Size:957K  kec
 khb1d0n60d i.pdf

KHB1D9N60D KHB1D9N60D

KHB1D0N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D0N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20switching mode powe

 9.3. Size:412K  kec
 khb1d0n70g.pdf

KHB1D9N60D KHB1D9N60D

KHB1D0N70GSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastB Cswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for switch mode powersupplies and low power battery chargers.N DIM MILLIMETERSA 4.70 MAXEKB

 9.4. Size:1019K  kec
 khb1d0n60g.pdf

KHB1D9N60D KHB1D9N60D

SEMICONDUCTORKHB1D0N60GN-Ch Planer MOSFETTECHNICAL DATAGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for switch mode powersupplies and low power battery chargers.FEATURES VDSS= 600V, ID= 0.4ADrain-Source ON Resistance

 9.5. Size:966K  kec
 khb1d2n80d i.pdf

KHB1D9N60D KHB1D9N60D

KHB1D2N80D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D2N80DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20_switching mode p

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