KHB1D9N60D MOSFET. Datasheet pdf. Equivalent
Type Designator: KHB1D9N60D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.9 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 45.7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
Package: DPAK
KHB1D9N60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KHB1D9N60D Datasheet (PDF)
khb1d9n60d i.pdf
KHB1D9N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D9N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for switching modeLC D_A 6.60 + 0.20_B 6.10 + 0.20power sup
khb1d0n60i.pdf
KHB1D0N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D0N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS= 600V, ID= 1.0A
khb1d0n60d i.pdf
KHB1D0N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D0N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20switching mode powe
khb1d0n70g.pdf
KHB1D0N70GSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastB Cswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for switch mode powersupplies and low power battery chargers.N DIM MILLIMETERSA 4.70 MAXEKB
khb1d0n60g.pdf
SEMICONDUCTORKHB1D0N60GN-Ch Planer MOSFETTECHNICAL DATAGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for switch mode powersupplies and low power battery chargers.FEATURES VDSS= 600V, ID= 0.4ADrain-Source ON Resistance
khb1d2n80d i.pdf
KHB1D2N80D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D2N80DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20_switching mode p
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: PSMN5R0-80PS
History: PSMN5R0-80PS
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