FDR858P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDR858P
Código: 858P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.8 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 21 nC
Tiempo de subida (tr): 15 nS
Conductancia de drenaje-sustrato (Cd): 590 pF
Resistencia entre drenaje y fuente RDS(on): 0.019 Ohm
Paquete / Cubierta: SUPERSOT8
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FDR858P Datasheet (PDF)
fdr858p.pdf
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March 1998FDR856P P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesSuperSOTTM-8 P-Channel enhancement mode power field - 6.3 A, -30 V, RDS(ON) =0.025 @ VGS = -10 Veffect transistors are produced using Fairchild's RDS(ON) =0.040 @ VGS = -4.5 V. proprietary, high cell density, DMOS technology. This verySuperSOTTM-8 package:high den
Otros transistores... FDR4410 , FDR4420A , FDR8305N , FDR8308P , FDR836P , FDR838P , FDR8508P , FDR856P , IRF630 , FDS3570 , FDS3580 , FDS4410 , FDS4435 , FDS4435A , FDS4953 , FDS5680 , FDS5690 .
