FDR858P Specs and Replacement
Type Designator: FDR858P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 590 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: SUPERSOT8
FDR858P substitution
FDR858P datasheet
fdr858p.pdf
February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level -8 A, -30 V. RDS(ON) = 0.019 @ VGS = -10 V, MOSFETs have been designed to provide a low profile, RDS(ON) = 0.028 @ VGS = -4.5 V. small footprint alternative to industry standard SO-8 little foot type product. Low gate charge (2... See More ⇒
fdr8508p.pdf
March 1999 FDR8508P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features -3.0 A, -30 V. RDS(ON) = 0.052 @ VGS = -10V These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.086 @ VGS = -4.5V. process that has been especially tailored to minimize the Low gate charge. (8nC typical). on s... See More ⇒
fdr856p.pdf
March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field - 6.3 A, -30 V, RDS(ON) =0.025 @ VGS = -10 V effect transistors are produced using Fairchild's RDS(ON) =0.040 @ VGS = -4.5 V. proprietary, high cell density, DMOS technology. This very SuperSOTTM-8 package high den... See More ⇒
Detailed specifications: FDR4410 , FDR4420A , FDR8305N , FDR8308P , FDR836P , FDR838P , FDR8508P , FDR856P , IRF3710 , FDS3570 , FDS3580 , FDS4410 , FDS4435 , FDS4435A , FDS4953 , FDS5680 , FDS5690 .
Keywords - FDR858P MOSFET specs
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