KU2303K Todos los transistores

 ..1. Size:898K  kec
 ku2303k.pdf

SEMICONDUCTOR KU2303K TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. FEATURES VDSS=30V, ID=66A. Low Drain to Source On-state Resistance. RDS(ON)=7.4m (Max.) @ VGS=10V RDS(ON)

 8.1. Size:808K  kec
 ku2303d.pdf

SEMICONDUCTOR KU2303D TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for DC/DC Converter. C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 + 0.15

 8.2. Size:804K  kec
 ku2303q.pdf

SEMICONDUCTOR KU2303Q TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for DC/DC Converter and Battery pack. T D P G L U FEATURES A VDSS=30V, ID=14A. DIM MILLIMETERS Drain to Source On Resistance

 9.1. Size:900K  kec
 ku2307k.pdf

SEMICONDUCTOR KU2307K TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. FEATURES VDSS=30V, ID=79A. Low Drain to Source On-state Resistance. RDS(ON)=6.0m (Max.) @ VGS=10V RDS(ON)

 9.2. Size:800K  kec
 ku2307d.pdf

SEMICONDUCTOR KU2307D TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for DC/DC Converter. C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 + 0.15

 9.3. Size:806K  kec
 ku2307q.pdf

SEMICONDUCTOR KU2307Q TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for DC/DC Converter and Battery pack.. T D P G L U FEATURES A VDSS=30V, ID=16A. DIM MILLIMETERS Drain to Source On Resistanc