KU2303K Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: KU2303K
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 54 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 66 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 7.1 ns
Cossⓘ - Выходная емкость: 311 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0062 Ohm
Тип корпуса: PSOP8
- подбор MOSFET транзистора по параметрам
KU2303K Datasheet (PDF)
ku2303k.pdf

SEMICONDUCTOR KU2303KTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for DC/DC Converter.FEATURES VDSS=30V, ID=66A.Low Drain to Source On-state Resistance.: RDS(ON)=7.4m(Max.) @ VGS=10V: RDS(ON)
ku2303d.pdf

SEMICONDUCTOR KU2303DTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for DC/DC Converter.C D_A 6.60 + 0.20_B 6.10 + 0.20_C 5.34 + 0.30_D 0.70 + 0.20_E 2.70 + 0.15
ku2303q.pdf

SEMICONDUCTOR KU2303QTECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for DC/DC Converter and Battery pack.TD P GLUFEATURES AVDSS=30V, ID=14A.DIM MILLIMETERSDrain to Source On Resistance
ku2307k.pdf

SEMICONDUCTOR KU2307KTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for DC/DC Converter.FEATURES VDSS=30V, ID=79A.Low Drain to Source On-state Resistance.: RDS(ON)=6.0m(Max.) @ VGS=10V: RDS(ON)
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NTMD6N03R2 | FDMS0309AS
History: NTMD6N03R2 | FDMS0309AS



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