All MOSFET. KU2303K Datasheet

 

KU2303K MOSFET. Datasheet pdf. Equivalent


   Type Designator: KU2303K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 66 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18.4 nC
   trⓘ - Rise Time: 7.1 nS
   Cossⓘ - Output Capacitance: 311 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: PSOP8

 KU2303K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KU2303K Datasheet (PDF)

 ..1. Size:898K  kec
 ku2303k.pdf

KU2303K KU2303K

SEMICONDUCTOR KU2303KTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for DC/DC Converter.FEATURES VDSS=30V, ID=66A.Low Drain to Source On-state Resistance.: RDS(ON)=7.4m(Max.) @ VGS=10V: RDS(ON)

 8.1. Size:808K  kec
 ku2303d.pdf

KU2303K KU2303K

SEMICONDUCTOR KU2303DTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for DC/DC Converter.C D_A 6.60 + 0.20_B 6.10 + 0.20_C 5.34 + 0.30_D 0.70 + 0.20_E 2.70 + 0.15

 8.2. Size:804K  kec
 ku2303q.pdf

KU2303K KU2303K

SEMICONDUCTOR KU2303QTECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for DC/DC Converter and Battery pack.TD P GLUFEATURES AVDSS=30V, ID=14A.DIM MILLIMETERSDrain to Source On Resistance

 9.1. Size:900K  kec
 ku2307k.pdf

KU2303K KU2303K

SEMICONDUCTOR KU2307KTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for DC/DC Converter.FEATURES VDSS=30V, ID=79A.Low Drain to Source On-state Resistance.: RDS(ON)=6.0m(Max.) @ VGS=10V: RDS(ON)

 9.2. Size:800K  kec
 ku2307d.pdf

KU2303K KU2303K

SEMICONDUCTOR KU2307DTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for DC/DC Converter.C D_A 6.60 + 0.20_B 6.10 + 0.20_C 5.34 + 0.30_D 0.70 + 0.20_E 2.70 + 0.15

 9.3. Size:806K  kec
 ku2307q.pdf

KU2303K KU2303K

SEMICONDUCTOR KU2307QTECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for DC/DC Converter and Battery pack..TD P GLUFEATURES AVDSS=30V, ID=16A.DIM MILLIMETERSDrain to Source On Resistanc

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