FDS3580 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS3580

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm

Encapsulados: SO8

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FDS3580 datasheet

 ..1. Size:83K  fairchild semi
 fds3580.pdf pdf_icon

FDS3580

December 2000 FDS3580 80V N-Channel PowerTrench MOSFET General Description Features 7.6 A, 80 V. RDS(ON) = 0.029 @ VGS = 10 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.033 @ VGS = 6 V. either synchronous or conventional switching PWM controllers. Low gate charge (3

 9.1. Size:81K  fairchild semi
 fds3570.pdf pdf_icon

FDS3580

December 2000 FDS3570 80V N-Channel PowerTrench MOSFET General Description Features 9 A, 80 V. RDS(ON) = 0.020 @ VGS = 10 V This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.023 @ VGS = 6 V. converters using either synchronous or conventional switching PWM controllers. Fast swi

 9.2. Size:86K  fairchild semi
 fds3590.pdf pdf_icon

FDS3580

November 2000 FDS3590 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 6.5 A, 80 V RDS(ON) = 39 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 44 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge These MOSFETs feature faster

 9.3. Size:86K  fairchild semi
 fds3512.pdf pdf_icon

FDS3580

May 2001 FDS3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.0 A, 80 V RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (13nC Typical) These MO

MOSTRAR MÁS

Otros transistores... FDR8305N, FDR8308P, FDR836P, FDR838P, FDR8508P, FDR856P, FDR858P, FDS3570, AON6414A, FDS4410, FDS4435, FDS4435A, FDS4953, FDS5680, FDS5690, FDS6375, FDS6570A