FDS3580 MOSFET Datasheet: N-Ch, 80V, 7.6A. Full specification with pinout and replacement list

FDS3580 Specs and Replacement

   Type Designator: FDS3580
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SO8

FDS3580 substitution

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FDS3580 datasheet

..1. Size:83K fairchild semi
fds3580.pdf pdf_icon

December 2000 FDS3580 80V N-Channel PowerTrench MOSFET General Description Features 7.6 A, 80 V. RDS(ON) = 0.029 @ VGS = 10 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.033 @ VGS = 6 V. either synchronous or conventional switching PWM controllers. Low gate charge (3... See More ⇒

9.1. Size:81K fairchild semi
fds3570.pdf pdf_icon

December 2000 FDS3570 80V N-Channel PowerTrench MOSFET General Description Features 9 A, 80 V. RDS(ON) = 0.020 @ VGS = 10 V This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.023 @ VGS = 6 V. converters using either synchronous or conventional switching PWM controllers. Fast swi... See More ⇒

9.2. Size:86K fairchild semi
fds3590.pdf pdf_icon

November 2000 FDS3590 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 6.5 A, 80 V RDS(ON) = 39 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 44 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge These MOSFETs feature faster... See More ⇒

9.3. Size:86K fairchild semi
fds3512.pdf pdf_icon

May 2001 FDS3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.0 A, 80 V RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (13nC Typical) These MO... See More ⇒