KHB019N20F1 Todos los transistores

 

KHB019N20F1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KHB019N20F1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 19 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: TO220IS

 Búsqueda de reemplazo de KHB019N20F1 MOSFET

- Selecciónⓘ de transistores por parámetros

 

KHB019N20F1 datasheet

 4.1. Size:90K  kec
 khb019n20f2 khb019n20p1.pdf pdf_icon

KHB019N20F1

KHB019N20P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB019N20P1 A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ A 9.9 + 0.2 avalanche characteristics. It is mainly suitable for DC/DC converters B B 15.95 MAX Q

 5.1. Size:497K  kec
 khb019n20p1 f1 f2.pdf pdf_icon

KHB019N20F1

KHB019N20P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB019N20P1 A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ A 9.9 + 0.2 avalanche characteristics. It is mainly suitable for DC/DC converters B B 15.95 MAX Q

 9.1. Size:1322K  kec
 khb011n40f1 khb011n40f2 khb011n40p1.pdf pdf_icon

KHB019N20F1

KHB011N40P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB011N40P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 400V

Otros transistores... KMA5D2N30XA , KMB8D0P30QA , KMD4D5P30XA , KTK951S , KTK921U , KHB011N40F1 , KHB011N40F2 , KHB011N40P1 , IRF740 , KHB019N20F2 , KHB019N20P1 , KHB1D0N60G , KHB1D0N60I , KHB1D2N80D , KHB1D2N80I , KHB7D0N65F1 , KHB9D5N20F .

 

 

 

 

↑ Back to Top
.