KHB019N20F1 Todos los transistores

 

KHB019N20F1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KHB019N20F1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 19 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TO220IS
 

 Búsqueda de reemplazo de KHB019N20F1 MOSFET

   - Selección ⓘ de transistores por parámetros

 

KHB019N20F1 Datasheet (PDF)

 4.1. Size:90K  kec
khb019n20f2 khb019n20p1.pdf pdf_icon

KHB019N20F1

KHB019N20P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB019N20P1AOThis planar stripe MOSFET has better characteristics, such as fast CFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for DC/DC convertersBB 15.95 MAXQ

 5.1. Size:497K  kec
khb019n20p1 f1 f2.pdf pdf_icon

KHB019N20F1

KHB019N20P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB019N20P1AOThis planar stripe MOSFET has better characteristics, such as fast CFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for DC/DC convertersBB 15.95 MAXQ

 9.1. Size:1322K  kec
khb011n40f1 khb011n40f2 khb011n40p1.pdf pdf_icon

KHB019N20F1

KHB011N40P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB011N40P1This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS(Min.)= 400V

Otros transistores... KMA5D2N30XA , KMB8D0P30QA , KMD4D5P30XA , KTK951S , KTK921U , KHB011N40F1 , KHB011N40F2 , KHB011N40P1 , IRF740 , KHB019N20F2 , KHB019N20P1 , KHB1D0N60G , KHB1D0N60I , KHB1D2N80D , KHB1D2N80I , KHB7D0N65F1 , KHB9D5N20F .

History: FDBL86210F085 | WNM07N60 | WML26N60C4 | STB20NM50T4 | SWD2N60DC | HRP90N75K | NCE30P28Q

 

 
Back to Top

 


 
.