KHB019N20F1 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: KHB019N20F1
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 19 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 33 ns
Cossⓘ - Выходная емкость: 80 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
Тип корпуса: TO220IS
- подбор MOSFET транзистора по параметрам
KHB019N20F1 Datasheet (PDF)
khb019n20f2 khb019n20p1.pdf

KHB019N20P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB019N20P1AOThis planar stripe MOSFET has better characteristics, such as fast CFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for DC/DC convertersBB 15.95 MAXQ
khb019n20p1 f1 f2.pdf

KHB019N20P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB019N20P1AOThis planar stripe MOSFET has better characteristics, such as fast CFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_A 9.9 + 0.2avalanche characteristics. It is mainly suitable for DC/DC convertersBB 15.95 MAXQ
khb011n40f1 khb011n40f2 khb011n40p1.pdf

KHB011N40P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB011N40P1This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS(Min.)= 400V
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: PJD1NA50 | TK12P60W | IRF615 | SI4953ADY-T1-E3 | IRF1405ZS-7PPBF | AP85T10AGP | H05N60F
History: PJD1NA50 | TK12P60W | IRF615 | SI4953ADY-T1-E3 | IRF1405ZS-7PPBF | AP85T10AGP | H05N60F



Список транзисторов
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