KHB019N20F1 MOSFET Datasheet: N-Ch, 200V, 19A. Full specification with pinout and replacement list

KHB019N20F1 Specs and Replacement

Type Designator: KHB019N20F1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO220IS

KHB019N20F1 substitution

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KHB019N20F1 datasheet

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KHB019N20P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB019N20P1 A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ A 9.9 + 0.2 avalanche characteristics. It is mainly suitable for DC/DC converters B B 15.95 MAX Q ... See More ⇒

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KHB011N40P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB011N40P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 400V... See More ⇒

Detailed specifications: KMA5D2N30XA, KMB8D0P30QA, KMD4D5P30XA, KTK951S, KTK921U, KHB011N40F1, KHB011N40F2, KHB011N40P1, IRF740, KHB019N20F2, KHB019N20P1, KHB1D0N60G, KHB1D0N60I, KHB1D2N80D, KHB1D2N80I, KHB7D0N65F1, KHB9D5N20F