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FDS4435 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS4435

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 8.8 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 24 nC

Resistencia drenaje-fuente RDS(on): 0.02 Ohm

Empaquetado / Estuche: SO8

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FDS4435 Datasheet (PDF)

1.1. fds4435bz.pdf Size:225K _fairchild_semi

FDS4435
FDS4435

April 2009 FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductors advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimize the

1.2. fds4435bz f085.pdf Size:296K _fairchild_semi

FDS4435
FDS4435

July 2009 FDS4435BZ_F085 P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductors advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimize

 1.3. fds4435.pdf Size:64K _fairchild_semi

FDS4435
FDS4435

October 2001 FDS4435 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m? @ V = 10 V DS(ON) GS Fairchild Semiconductors advanced PowerTrench R = 35 m? @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave drive Low gate

1.4. fds4435a.pdf Size:172K _fairchild_semi

FDS4435
FDS4435

October 2001 FDS4435A P-Channel Logic Level PowerTrench? MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V Fairchild Semiconductors advanced PowerTrench process RDS(ON) = 0.025 W @ VGS = -4.5 V that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for sup

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