FDS4435 Todos los transistores

 

FDS4435 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS4435
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 8.8 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 17 nC
   trⓘ - Tiempo de subida: 13.5 nS
   Cossⓘ - Capacitancia de salida: 408 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SO8

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FDS4435 Datasheet (PDF)

 ..1. Size:64K  fairchild semi
fds4435.pdf

FDS4435 FDS4435

October 2001 FDS4435 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 35 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave

 0.1. Size:296K  fairchild semi
fds4435bz f085.pdf

FDS4435 FDS4435

July 2009FDS4435BZ_F085P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductors advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to mi

 0.2. Size:172K  fairchild semi
fds4435a.pdf

FDS4435 FDS4435

October 2001FDS4435AP-Channel Logic Level PowerTrench MOSFET General DescriptionFeaturesThis P-Channel Logic Level MOSFET is produced using -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 VFairchild Semiconductors advanced PowerTrench processRDS(ON) = 0.025 W @ VGS = -4.5 Vthat has been especially tailored to minimize the on-stateresistance and yet maintain low gate charg

 0.3. Size:225K  fairchild semi
fds4435bz.pdf

FDS4435 FDS4435

April 2009FDS4435BZP-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductors advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimi

 0.4. Size:342K  onsemi
fds4435bz.pdf

FDS4435 FDS4435

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.5. Size:2378K  cn vbsemi
fds4435-nl.pdf

FDS4435 FDS4435

FDS4435-NLwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

 0.6. Size:819K  cn vbsemi
fds4435a.pdf

FDS4435 FDS4435

FDS4435Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

 0.7. Size:1468K  cn vbsemi
fds4435bz.pdf

FDS4435 FDS4435

FDS4435BZwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

Otros transistores... FDR836P , FDR838P , FDR8508P , FDR856P , FDR858P , FDS3570 , FDS3580 , FDS4410 , 7N65 , FDS4435A , FDS4953 , FDS5680 , FDS5690 , FDS6375 , FDS6570A , FDS6575 , FDS6576 .

 

 
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