All MOSFET. FDS4435 Datasheet

 

FDS4435 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDS4435

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 8.8 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 24 nC

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: SO8

FDS4435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS4435 Datasheet (PDF)

0.1. fds4435bz.pdf Size:225K _fairchild_semi

FDS4435 FDS4435

April 2009 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductor’s advanced PowerTrench® process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimi

0.2. fds4435.pdf Size:64K _fairchild_semi

FDS4435 FDS4435

October 2001 FDS4435 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel • –8.8 A, –30 V R = 20 mΩ @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R = 35 mΩ @ V = –4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave

 0.3. fds4435a.pdf Size:172K _fairchild_semi

FDS4435 FDS4435

October 2001 FDS4435A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using • -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V Fairchild Semiconductor’s advanced PowerTrench process RDS(ON) = 0.025 W @ VGS = -4.5 V that has been especially tailored to minimize the on-state resistance and yet maintain low gate charg

0.4. fds4435bz f085.pdf Size:296K _fairchild_semi

FDS4435 FDS4435

July 2009 FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductor’s advanced PowerTrench® process that has Extended VGSS range (-25V) for battery applications been especially tailored to mi

Datasheet: FDR836P , FDR838P , FDR8508P , FDR856P , FDR858P , FDS3570 , FDS3580 , FDS4410 , IRFB3306 , FDS4435A , FDS4953 , FDS5680 , FDS5690 , FDS6375 , FDS6570A , FDS6575 , FDS6576 .

 

 
Back to Top