FDS4435 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS4435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 8.8 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 17 nC
Rise Time (tr): 13.5 nS
Drain-Source Capacitance (Cd): 408 pF
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: SO8
FDS4435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS4435 Datasheet (PDF)
0.1. fds4435bz.pdf 
Size:225K _fairchild_semi
April 2009FDS4435BZP-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductors advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimi
0.2. fds4435.pdf Size:64K _fairchild_semi
October 2001 FDS4435 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 35 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave
0.3. fds4435a.pdf Size:172K _fairchild_semi
October 2001FDS4435AP-Channel Logic Level PowerTrench MOSFET General DescriptionFeaturesThis P-Channel Logic Level MOSFET is produced using -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 VFairchild Semiconductors advanced PowerTrench processRDS(ON) = 0.025 W @ VGS = -4.5 Vthat has been especially tailored to minimize the on-stateresistance and yet maintain low gate charg
0.4. fds4435bz f085.pdf Size:296K _fairchild_semi
July 2009FDS4435BZ_F085P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductors advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to mi
Datasheet: FDR836P , FDR838P , FDR8508P , FDR856P , FDR858P , FDS3570 , FDS3580 , FDS4410 , IRFB3306 , FDS4435A , FDS4953 , FDS5680 , FDS5690 , FDS6375 , FDS6570A , FDS6575 , FDS6576 .
