FDS4435 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS4435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Drain Current |Id|: 8.8 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: SO8
FDS4435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS4435 Datasheet (PDF)
1.1. fds4435bz.pdf 
Size:225K _fairchild_semi
April 2009 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductor’s advanced PowerTrench® process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimize the
1.2. fds4435bz_f085.pdf Size:296K _fairchild_semi
July 2009 FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductor’s advanced PowerTrench® process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimize
1.3. fds4435.pdf Size:64K _fairchild_semi
October 2001 FDS4435 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel • –8.8 A, –30 V R = 20 m? @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R = 35 m? @ V = –4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave drive • Low gate
1.4. fds4435a.pdf Size:172K _fairchild_semi
October 2001 FDS4435A P-Channel Logic Level PowerTrench? MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using • -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V Fairchild Semiconductor’s advanced PowerTrench process RDS(ON) = 0.025 W @ VGS = -4.5 V that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for sup
Datasheet: FDR836P , FDR838P , FDR8508P , FDR856P , FDR858P , FDS3570 , FDS3580 , FDS4410 , IRFB3306 , FDS4435A , FDS4953 , FDS5680 , FDS5690 , FDS6375 , FDS6570A , FDS6575 , FDS6576 .
