FDS4435 - описание и поиск аналогов

 ..1. Size:64K  fairchild semi
 fds4435.pdf 

October 2001 FDS4435 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 35 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave

 0.1. Size:296K  fairchild semi
 fds4435bz f085.pdf 

July 2009 FDS4435BZ_F085 P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductor s advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to mi

 0.2. Size:172K  fairchild semi
 fds4435a.pdf 

October 2001 FDS4435A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V Fairchild Semiconductor s advanced PowerTrench process RDS(ON) = 0.025 W @ VGS = -4.5 V that has been especially tailored to minimize the on-state resistance and yet maintain low gate charg

 0.3. Size:225K  fairchild semi
 fds4435bz.pdf 

April 2009 FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductor s advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimi

 0.4. Size:342K  onsemi
 fds4435bz.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.5. Size:2378K  cn vbsemi
 fds4435-nl.pdf 

FDS4435-NL www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D

 0.6. Size:819K  cn vbsemi
 fds4435a.pdf 

FDS4435A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D

 0.7. Size:1468K  cn vbsemi
 fds4435bz.pdf 

FDS4435BZ www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D