2N4003NLT1 Todos los transistores

 

2N4003NLT1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N4003NLT1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 47.9 nS
   Cossⓘ - Capacitancia de salida: 19.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: SOT23
 

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2N4003NLT1 Datasheet (PDF)

 ..1. Size:379K  willas
 2n4003nlt1.pdf pdf_icon

2N4003NLT1

FM120-M WILLASTHRU2N4003NLT1Small Signal MOSFET 30V,0.56A, Single, SOT-23FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in ord

 8.1. Size:1047K  wietron
 2n4003k.pdf pdf_icon

2N4003NLT1

2N4003K3 DRAINN-Channel Enhancement DRAIN CURRENTMode Power MOSFET10.5 AMPERES GATEP b Lead(Pb)-Free*DRAIN SOUCE VOLTAGE* Gate 30 VOLTAGE PretectionFeatures: DiodeSOURCE 2* Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design.* Low Gate Charge for Fast Switching.3* ESD Protected Gate.* Minimum Breakdown Voltage Rating of 30V.12

 9.1. Size:11K  semelab
 2n4000.pdf pdf_icon

2N4003NLT1

2N4000Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

 9.2. Size:11K  semelab
 2n4001.pdf pdf_icon

2N4003NLT1

2N4001Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 100V dia.IC = 1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

MOSTRAR MÁS

Otros transistores... KTK597E , KTK597TV , KTK597V , KTK598TV , KTK598V , KTK697TV , KTK698TV , KTX598TF , IRF9540 , 2N7002DW1T1 , 2N7002ELT1 , 2N7002LT1 , 2N7002NT1 , 2N7002WT1 , 2SK3018LT1 , 2SK3018WT1 , 2SK3019TT1 .

History: 2SK1563 | NCE6003 | SW4N60A | IPD65R1K4CFD | SSU65R420S2 | DMN2027LK3 | NCE6802

 

 
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