2N4003NLT1 Todos los transistores

 

2N4003NLT1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N4003NLT1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.69 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 47.9 nS

Cossⓘ - Capacitancia de salida: 19.7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm

Encapsulados: SOT23

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2N4003NLT1 datasheet

 ..1. Size:379K  willas
 2n4003nlt1.pdf pdf_icon

2N4003NLT1

FM120-M WILLAS THRU 2N4003NLT1 Small Signal MOSFET 30V,0.56A, Single, SOT-23 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in ord

 8.1. Size:1047K  wietron
 2n4003k.pdf pdf_icon

2N4003NLT1

2N4003K 3 DRAIN N-Channel Enhancement DRAIN CURRENT Mode Power MOSFET 1 0.5 AMPERES GATE P b Lead(Pb)-Free * DRAIN SOUCE VOLTAGE * Gate 30 VOLTAGE Pretection Features Diode SOURCE 2 * Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching. 3 * ESD Protected Gate. * Minimum Breakdown Voltage Rating of 30V. 1 2

 9.1. Size:11K  semelab
 2n4000.pdf pdf_icon

2N4003NLT1

2N4000 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

 9.2. Size:11K  semelab
 2n4001.pdf pdf_icon

2N4003NLT1

2N4001 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 100V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

MOSTRAR MÁS

Otros transistores... KTK597E , KTK597TV , KTK597V , KTK598TV , KTK598V , KTK697TV , KTK698TV , KTX598TF , 2N7000 , 2N7002DW1T1 , 2N7002ELT1 , 2N7002LT1 , 2N7002NT1 , 2N7002WT1 , 2SK3018LT1 , 2SK3018WT1 , 2SK3019TT1 .

 

 

 

 

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