All MOSFET. 2N4003NLT1 Datasheet

 

2N4003NLT1 Datasheet and Replacement


   Type Designator: 2N4003NLT1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 47.9 nS
   Cossⓘ - Output Capacitance: 19.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: SOT23
 

 2N4003NLT1 substitution

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2N4003NLT1 Datasheet (PDF)

 ..1. Size:379K  willas
 2n4003nlt1.pdf pdf_icon

2N4003NLT1

FM120-M WILLASTHRU2N4003NLT1Small Signal MOSFET 30V,0.56A, Single, SOT-23FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in ord

 8.1. Size:1047K  wietron
 2n4003k.pdf pdf_icon

2N4003NLT1

2N4003K3 DRAINN-Channel Enhancement DRAIN CURRENTMode Power MOSFET10.5 AMPERES GATEP b Lead(Pb)-Free*DRAIN SOUCE VOLTAGE* Gate 30 VOLTAGE PretectionFeatures: DiodeSOURCE 2* Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design.* Low Gate Charge for Fast Switching.3* ESD Protected Gate.* Minimum Breakdown Voltage Rating of 30V.12

 9.1. Size:11K  semelab
 2n4000.pdf pdf_icon

2N4003NLT1

2N4000Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

 9.2. Size:11K  semelab
 2n4001.pdf pdf_icon

2N4003NLT1

2N4001Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 100V dia.IC = 1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

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Datasheet: KTK597E , KTK597TV , KTK597V , KTK598TV , KTK598V , KTK697TV , KTK698TV , KTX598TF , IRFP250N , 2N7002DW1T1 , 2N7002ELT1 , 2N7002LT1 , 2N7002NT1 , 2N7002WT1 , 2SK3018LT1 , 2SK3018WT1 , 2SK3019TT1 .

History: WMS17P03TS

Keywords - 2N4003NLT1 MOSFET datasheet

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