2N7002LT1 Todos los transistores

 

2N7002LT1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N7002LT1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.225 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.115 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 10 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
   Paquete / Cubierta: SOT23

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2N7002LT1 Datasheet (PDF)

 ..1. Size:98K  motorola
2n7002lt1.pdf

2N7002LT1
2N7002LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7002LT1/DTMOS FET Transistor2N7002LT13 DRAINNChannel EnhancementMotorola Preferred Device1GATE32 SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcCASE 31808, STYLE 21SOT23 (TO236AB)DrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcDrain Current Con

 ..2. Size:370K  willas
2n7002lt1.pdf

2N7002LT1
2N7002LT1

FM120-M WILLASTHRU2N7002LT1Small Signal MOSFET 115 mAmps, 60 VoltsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

 0.1. Size:94K  motorola
2n7002lt1rev2.pdf

2N7002LT1
2N7002LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7002LT1/DTMOS FET Transistor2N7002LT13 DRAINNChannel EnhancementMotorola Preferred Device1GATE32 SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcCASE 31808, STYLE 21SOT23 (TO236AB)DrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcDrain Current Con

 0.2. Size:524K  lrc
l2n7002lt1g s-l2n7002lt1g.pdf

2N7002LT1
2N7002LT1

L2N7002LT1GS-L2N7002LT1GSmall Signal MOSFET115 mAmps, 60 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD Protected:1000V2.

 0.3. Size:340K  lrc
l2n7002lt1g.pdf

2N7002LT1
2N7002LT1

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002LT1G115 mAmps, 60 VoltsNChannel SOT233 We declare that the material of product 1compliance with RoHS requirements.2 ESD Protected:1000VCASE 318, STYLE 21SOT 23 (TO236AB)MAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 Vd

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