2N7002LT1 - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN N Channel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc CASE 318 08, STYLE 21 SOT 23 (TO 236AB) Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc Drain Current Con

FM120-M WILLAS THRU 2N7002LT1 Small Signal MOSFET 115 mAmps, 60 Volts FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN N Channel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc CASE 318 08, STYLE 21 SOT 23 (TO 236AB) Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc Drain Current Con

L2N7002LT1G S-L2N7002LT1G Small Signal MOSFET 115 mAmps, 60 Volts N Channel SOT-23 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. ESD Protected 1000V 2.

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET L2N7002LT1G 115 mAmps, 60 Volts N Channel SOT 23 3 We declare that the material of product 1 compliance with RoHS requirements. 2 ESD Protected 1000V CASE 318, STYLE 21 SOT 23 (TO 236AB) MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vd