All MOSFET. 2N7002LT1 Datasheet

 

2N7002LT1 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N7002LT1

SMD Transistor Code: 702

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.225 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 0.115 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 10 pF

Maximum Drain-Source On-State Resistance (Rds): 7.5 Ohm

Package: SOT23

2N7002LT1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N7002LT1 Datasheet (PDF)

1.1. 2n7002lt1.pdf Size:98K _motorola

2N7002LT1
2N7002LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN NChannel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit DrainSource Voltage VDSS 60 Vdc CASE 31808, STYLE 21 SOT23 (TO236AB) DrainGate Voltage (RGS = 1.0 M?) VDGR 60 Vdc Drain Current Continuous TC = 25C(1

1.2. 2n7002lt1rev2.pdf Size:94K _motorola

2N7002LT1
2N7002LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN NChannel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit DrainSource Voltage VDSS 60 Vdc CASE 31808, STYLE 21 SOT23 (TO236AB) DrainGate Voltage (RGS = 1.0 M?) VDGR 60 Vdc Drain Current Continuous TC = 25C(1

 1.3. 2n7002lt1.pdf Size:370K _willas

2N7002LT1
2N7002LT1

FM120-M WILLAS THRU 2N7002LT1 Small Signal MOSFET 115 mAmps, 60 Volts FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to N

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