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H2N7000 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: H2N7000
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO92
 

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H2N7000 Datasheet (PDF)

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H2N7000

Spec. No. : HE6267HI-SINCERITYIssued Date : 1993.09.17Revised Date : 2006.08.10MICROELECTRONICS CORP.Page No. : 1/5H2N7000N-Channel Enhancement Mode TransistorDescriptionThe H2N7000 is designed for high voltage, high speed applications such as switchingregulators, converters, solenoid and relay drivers.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temp

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H2N7000

H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance While TO-92 provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, pow

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H2N7000

Spec. No. : MOS200809 HI-SINCERITY Issued Date : 2008.11.18 Revised Date :2010.04.14 MICROELECTRONICS CORP. Page No. : 1/4 H2N7002KSN Pin Assignment & Symbol 33-Lead Plastic SOT-323 H2N7002KSN Package Code: SN Pin 1: Gate 2: Source 3: DrainN-CHANNEL TRANSISTOR 21Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drai

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H2N7000

Spec. No. : MOS200803 HI-SINCERITY Issued Date : 2005.03.13 Revised Date :2010,03,04 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002K N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-Source Voltage .........................................................................................................

Otros transistores... H10N65F , H12N60E , H12N60F , H12N65E , H12N65F , H2301N , H2302N , H2305N , 5N50 , H2N7002 , H2N7002K , H2N7002KSN , H2N7002SN , H3055LJ , H3055MJ , H35N03J , H4422S .

History: IPP60R165CP | TPCC8005-H | IPB067N08N3G

 

 
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