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H2N7000 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: H2N7000

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: TO92

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H2N7000 datasheet

 ..1. Size:51K  hsmc
h2n7000.pdf pdf_icon

H2N7000

Spec. No. HE6267 HI-SINCERITY Issued Date 1993.09.17 Revised Date 2006.08.10 MICROELECTRONICS CORP. Page No. 1/5 H2N7000 N-Channel Enhancement Mode Transistor Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temp

 ..2. Size:423K  shantou-huashan
h2n7000.pdf pdf_icon

H2N7000

H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance While TO-92 provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, pow

 8.1. Size:156K  hsmc
h2n7002ksn.pdf pdf_icon

H2N7000

Spec. No. MOS200809 HI-SINCERITY Issued Date 2008.11.18 Revised Date 2010.04.14 MICROELECTRONICS CORP. Page No. 1/4 H2N7002KSN Pin Assignment & Symbol 3 3-Lead Plastic SOT-323 H2N7002KSN Package Code SN Pin 1 Gate 2 Source 3 Drain N-CHANNEL TRANSISTOR 2 1 Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drai

 8.2. Size:136K  hsmc
h2n7002k.pdf pdf_icon

H2N7000

Spec. No. MOS200803 HI-SINCERITY Issued Date 2005.03.13 Revised Date 2010,03,04 MICROELECTRONICS CORP. Page No. 1/5 H2N7002K N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-Source Voltage .........................................................................................................

Otros transistores... H10N65F , H12N60E , H12N60F , H12N65E , H12N65F , H2301N , H2302N , H2305N , IRFP064N , H2N7002 , H2N7002K , H2N7002KSN , H2N7002SN , H3055LJ , H3055MJ , H35N03J , H4422S .

History: STF2N80K5 | STF33N60M2

 

 

 


History: STF2N80K5 | STF33N60M2

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