All MOSFET. H2N7000 Datasheet

 

H2N7000 MOSFET. Datasheet pdf. Equivalent

Type Designator: H2N7000

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.2 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 5 Ohm

Package: TO92

H2N7000 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H2N7000 Datasheet (PDF)

1.1. h2n7000.pdf Size:51K _hsmc

H2N7000
H2N7000

Spec. No. : HE6267 HI-SINCERITY Issued Date : 1993.09.17 Revised Date : 2006.08.10 MICROELECTRONICS CORP. Page No. : 1/5 H2N7000 N-Channel Enhancement Mode Transistor Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Tempera

1.2. h2n7000.pdf Size:423K _shantou-huashan

H2N7000
H2N7000

H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description These products have been designed to minimize on-state resistance While TO-92 provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, pow

 4.1. h2n7002k.pdf Size:136K _hsmc

H2N7000
H2N7000

Spec. No. : MOS200803 HI-SINCERITY Issued Date : 2005.03.13 Revised Date :2010,03,04 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002K N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-Source Voltage ............................................................................................................

4.2. h2n7002ksn.pdf Size:156K _hsmc

H2N7000
H2N7000

Spec. No. : MOS200809 HI-SINCERITY Issued Date : 2008.11.18 Revised Date :2010.04.14 MICROELECTRONICS CORP. Page No. : 1/4 H2N7002KSN Pin Assignment & Symbol 3 3-Lead Plastic SOT-323 H2N7002KSN Package Code: SN Pin 1: Gate 2: Source 3: Drain N-CHANNEL TRANSISTOR 2 1 Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-S

 4.3. h2n7002sn.pdf Size:114K _hsmc

H2N7000
H2N7000

Spec. No. : MOS200605 HI-SINCERITY Issued Date : 2006.02.01 Revised Date : 2006.02.07 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002SN Pin Assignment & Symbol H2N7002SN 3 3-Lead Plastic SOT-323 Package Code: SN N-Channel MOSFET (60V, 0.2A) Pin 1: Gate 2: Source 3: Drain 2 1 D Description G N-channel enhancement-mode MOS transistor. S Absolute Maximum Ratings Drain-Source Voltag

4.4. h2n7002.pdf Size:129K _hsmc

H2N7000
H2N7000

Spec. No. : MOS200503 HI-SINCERITY Issued Date : 2005.04.01 Revised Date : 2009.10.09 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. SOT-23 Absolute Maximum Ratings Drain-Source Voltage ...................................................................................................................

Datasheet: H10N65F , H12N60E , H12N60F , H12N65E , H12N65F , H2301N , H2302N , H2305N , 2SK1058 , H2N7002 , H2N7002K , H2N7002KSN , H2N7002SN , H3055LJ , H3055MJ , H35N03J , H4422S .

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