H2N7000 PDF and Equivalents Search

 

H2N7000 Specs and Replacement

Type Designator: H2N7000

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO92

H2N7000 substitution

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H2N7000 datasheet

 ..1. Size:51K  hsmc
h2n7000.pdf pdf_icon

H2N7000

Spec. No. HE6267 HI-SINCERITY Issued Date 1993.09.17 Revised Date 2006.08.10 MICROELECTRONICS CORP. Page No. 1/5 H2N7000 N-Channel Enhancement Mode Transistor Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temp... See More ⇒

 ..2. Size:423K  shantou-huashan
h2n7000.pdf pdf_icon

H2N7000

H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance While TO-92 provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, pow... See More ⇒

 8.1. Size:156K  hsmc
h2n7002ksn.pdf pdf_icon

H2N7000

Spec. No. MOS200809 HI-SINCERITY Issued Date 2008.11.18 Revised Date 2010.04.14 MICROELECTRONICS CORP. Page No. 1/4 H2N7002KSN Pin Assignment & Symbol 3 3-Lead Plastic SOT-323 H2N7002KSN Package Code SN Pin 1 Gate 2 Source 3 Drain N-CHANNEL TRANSISTOR 2 1 Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drai... See More ⇒

 8.2. Size:136K  hsmc
h2n7002k.pdf pdf_icon

H2N7000

Spec. No. MOS200803 HI-SINCERITY Issued Date 2005.03.13 Revised Date 2010,03,04 MICROELECTRONICS CORP. Page No. 1/5 H2N7002K N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-Source Voltage ............................................................................................................ See More ⇒

Detailed specifications: H10N65F, H12N60E, H12N60F, H12N65E, H12N65F, H2301N, H2302N, H2305N, IRFP064N, H2N7002, H2N7002K, H2N7002KSN, H2N7002SN, H3055LJ, H3055MJ, H35N03J, H4422S

Keywords - H2N7000 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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