IRF741FI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 96124IRF7416QPbFHEXFET Power MOSFETl Advanced Process TechnologyA1 8l Ultra Low On-ResistanceS Dl P Channel MOSFETVDSS = -30V2 7S Dl Surface Mount3 6l Available in Tape & ReelS Dl 150C Operating Temperature45G DRDS(on) = 0.02l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive applications,

PD- 91330FIRF7413SMPS MOSFETHEXFET Power MOSFETVDSS RDS(on) max(mW) IDApplicationsl High frequency DC-DC converters30V 11@VGS = 10V 12ABenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6SEffective COSS to Simplify Design, (See DApp. Note AN1001) 45G Dl Fully Characterized Avalan

PD - 95017CIRF7413PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance AA1 8l N-Channel MosfetS Dl Surface Mount2 7S D VDSS = 30Vl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl 100% RG TestedRDS(on) = 0.011l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutil

PD - 96112IRF7413QPbFHEXFET Power MOSFETAl Advanced Process TechnologyA1 8S Dl Ultra Low On-Resistance2 7l N Channel MOSFETS D VDSS = 30Vl Surface Mount3 6S Dl Available in Tape & Reel4 5l 150C Operating TemperatureG DRDS(on) = 0.011l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive applications,

PD - 95335DIRF7413ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Control FET for Notebook Processor10m @VGS = 10VPower 30V 13Al Control and Synchronous RectifierMOSFET for Graphics Cards and POLAConverters in Computing, NetworkingA1 8S Dand Telecommunication Systems2 7S D3 6S DBenefits4 5G Dl Ultra-Low Gate ImpedanceSO-8l Very Low RDS

IRF7410TRPbF-1HEXFET Power MOSFETVDS -12 VA1 8S DRDS(on) max 72 7(@V = -4.5V) DGS SRDS(on) max 3 6S9 m D(@V = -2.5V)GS4 5G DRDS(on) max 13(@V = -1.8V)GSSO-8Top ViewQg (typical) 91 nCID -16 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount T

PD - 9.1613AIRF7413APRELIMINARYHEXFET Power MOSFETA Generation V TechnologyA1 8S D Ultra Low On-Resistance2 7 N-Channel Mosfet VDSS = 30VS D Surface Mount3 6S D Available in Tape & Reel4 5G D Dynamic dv/dt RatingRDS(on) = 0.0135 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing

IRF7416PbF-1HEXFET Power MOSFETVDS -30 VA1 8S DRDS(on) max 0.020 2 7(@V = -10V) S DGSQg (typical) 61 nC3 6S DID 4 5-10 AG D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmen

PD - 96247IRF7410GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 7m@VGS = -4.5V -16Al Surface Mount9m@VGS = -2.5V -13.6Al Available in Tape & Reel13m@VGS = -1.8V -11.5Al Lead-Freel Halogen-FreeDescriptionAThese P-Channel HEXFET Power MOSFETs from1 8S DInternational Rectifier utilize advanced processing

IRF7413PbF-1HEXFET Power MOSFETAVDS 30 V A1 8S DRDS(on) max 0.011 2 7S D(@V = 10V)GS3 6Qg (typical) 52 nCS DID 45G D13 A(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environme

PD - 94025IRF7410HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -12V 7m@VGS = -4.5V -16A Surface Mount9m@VGS = -2.5V -13.6A Available in Tape & Reel13m@VGS = -1.8V -11.5ADescriptionAThese P-Channel HEXFET Power MOSFETs from1 8S DInternational Rectifier utilize advanced processing2 7techniques to achieve the extrem

AUTOMOTIVE GRADEAUIRF7416QHEXFET Power MOSFETFeaturesl Advanced Process Technology A1 8S DV(BR)DSS-30Vl Low On-Resistance2 7S Dl Logic Level Gate Drive3 6S D RDS(on) max.0.02l P-Channel MOSFET4 5G Dl Dynamic dV/dT RatingID-10ATop Viewl 150C Operating Temperaturel Fast Switchingl Fully Avalanche Ratedl Lead-Free, RoHS Compliantl Autom

PD - 9.1356DIRF7416HEXFET Power MOSFET Generation V TechnologyA1 8 Ultra Low On-ResistanceS D P-Channel Mosfet VDSS = -30V2 7S D Surface Mount3 6S D Available in Tape & Reel4 5 Dynamic dv/dt RatingG DRDS(on) = 0.02 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to ach

PD - 96028BIRF7410PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 7m@VGS = -4.5V -16Al Surface Mount9m@VGS = -2.5V -13.6Al Available in Tape & Reel13m@VGS = -1.8V -11.5Al Lead-FreeDescriptionAThese P-Channel HEXFET Power MOSFETs from1 8S DInternational Rectifier utilize advanced processing2 7techniques

PD - 96124IRF7416QPbFHEXFET Power MOSFETl Advanced Process TechnologyA1 8l Ultra Low On-ResistanceS Dl P Channel MOSFETVDSS = -30V2 7S Dl Surface Mount3 6l Available in Tape & ReelS Dl 150C Operating Temperature45G DRDS(on) = 0.02l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive applications,

PD - 96250IRF7413GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance AA1 8l N-Channel MosfetS Dl Surface Mount2 7S D VDSS = 30Vl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl 100% RG TestedRDS(on) = 0.011l Lead-Freel Halogen-FreeTop ViewDescriptionFifth Generation HEXFETs from International

PD - 96252AIRF7416GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance A1 8S Dl P-Channel MosfetVDSS = -30Vl Surface Mount 2 7S Dl Available in Tape & Reel3 6l Dynamic dv/dt RatingS Dl Fast Switching45G Dl Lead-FreeRDS(on) = 0.02l Halogen-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize

PD - 95137AIRF7416PbFl Generation V Technology HEXFET Power MOSFETl Ultra Low On-ResistanceAl P-Channel Mosfet1 8S Dl Surface MountVDSS = -30V2 7S Dl Available in Tape & Reel3 6l Dynamic dv/dt RatingS Dl Fast Switching45G DRDS(on) = 0.02l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced proces

PD - 96249IRF7413ZGPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Control FET for Notebook Processor10m @VGS = 10VPower 30V 13Al Control and Synchronous RectifierMOSFET for Graphics Cards and POLAConverters in Computing, NetworkingA1 8S Dand Telecommunication Systems2 7S D3 6S DBenefits4 5l Ultra-Low Gate ImpedanceG Dl Very Low RDS(on)

SMD Type MOSFETN-Channel MOSFETIRF7413 (KRF7413)SOP-8 Features VDS (V) = 30V ID = 12 A (VGS = 10V)1.50 0.15 RDS(ON) 11m (VGS = 10V)1 8S D1 Source 5 Drain2 7S D6 Drain2 Source3 67 DrainS D 3 Source8 Drain4 Gate45G DTop View Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V

IRF7416TRPBFwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6

IRF7413TRPBFwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

IRF7410TRwww.VBsemi.twP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC0.0100 at VGS = - 1.8 V - 13APPLICATIONS Load Switch Battery SwitchS