IRF741FI - описание и поиск аналогов

PD - 96124 IRF7416QPbF HEXFET Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D l P Channel MOSFET VDSS = -30V 2 7 S D l Surface Mount 3 6 l Available in Tape & Reel S D l 150 C Operating Temperature 4 5 G D RDS(on) = 0.02 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applications,

PD- 91330F IRF7413 SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max(mW) ID Applications l High frequency DC-DC converters 30V 11@VGS = 10V 12A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S Effective COSS to Simplify Design, (See D App. Note AN1001) 4 5 G D l Fully Characterized Avalan

PD - 95017C IRF7413PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A A 1 8 l N-Channel Mosfet S D l Surface Mount 2 7 S D VDSS = 30V l Available in Tape & Reel l Dynamic dv/dt Rating 3 6 S D l Fast Switching 4 5 G D l 100% RG Tested RDS(on) = 0.011 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier util

PD - 96112 IRF7413QPbF HEXFET Power MOSFET A l Advanced Process Technology A 1 8 S D l Ultra Low On-Resistance 2 7 l N Channel MOSFET S D VDSS = 30V l Surface Mount 3 6 S D l Available in Tape & Reel 4 5 l 150 C Operating Temperature G D RDS(on) = 0.011 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applications,

PD - 95335D IRF7413ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Control FET for Notebook Processor 10m @VGS = 10V Power 30V 13A l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL A Converters in Computing, Networking A 1 8 S D and Telecommunication Systems 2 7 S D 3 6 S D Benefits 4 5 G D l Ultra-Low Gate Impedance SO-8 l Very Low RDS

IRF7410TRPbF-1 HEXFET Power MOSFET VDS -12 V A 1 8 S D RDS(on) max 7 2 7 (@V = -4.5V) D GS S RDS(on) max 3 6 S 9 m D (@V = -2.5V) GS 4 5 G D RDS(on) max 13 (@V = -1.8V) GS SO-8 Top View Qg (typical) 91 nC ID -16 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount T

PD - 9.1613A IRF7413A PRELIMINARY HEXFET Power MOSFET A Generation V Technology A 1 8 S D Ultra Low On-Resistance 2 7 N-Channel Mosfet VDSS = 30V S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating RDS(on) = 0.0135 Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing

IRF7416PbF-1 HEXFET Power MOSFET VDS -30 V A 1 8 S D RDS(on) max 0.020 2 7 (@V = -10V) S D GS Qg (typical) 61 nC 3 6 S D ID 4 5 -10 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmen

PD - 96247 IRF7410GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 7m @VGS = -4.5V -16A l Surface Mount 9m @VGS = -2.5V -13.6A l Available in Tape & Reel 13m @VGS = -1.8V -11.5A l Lead-Free l Halogen-Free Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing

IRF7413PbF-1 HEXFET Power MOSFET A VDS 30 V A 1 8 S D RDS(on) max 0.011 2 7 S D (@V = 10V) GS 3 6 Qg (typical) 52 nC S D ID 4 5 G D 13 A (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environme

PD - 94025 IRF7410 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 7m @VGS = -4.5V -16A Surface Mount 9m @VGS = -2.5V -13.6A Available in Tape & Reel 13m @VGS = -1.8V -11.5A Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques to achieve the extrem

AUTOMOTIVE GRADE AUIRF7416Q HEXFET Power MOSFET Features l Advanced Process Technology A 1 8 S D V(BR)DSS -30V l Low On-Resistance 2 7 S D l Logic Level Gate Drive 3 6 S D RDS(on) max. 0.02 l P-Channel MOSFET 4 5 G D l Dynamic dV/dT Rating ID -10A Top View l 150 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Autom

PD - 9.1356D IRF7416 HEXFET Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D P-Channel Mosfet VDSS = -30V 2 7 S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 Dynamic dv/dt Rating G D RDS(on) = 0.02 Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach

PD - 96028B IRF7410PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 7m @VGS = -4.5V -16A l Surface Mount 9m @VGS = -2.5V -13.6A l Available in Tape & Reel 13m @VGS = -1.8V -11.5A l Lead-Free Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques

PD - 96124 IRF7416QPbF HEXFET Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D l P Channel MOSFET VDSS = -30V 2 7 S D l Surface Mount 3 6 l Available in Tape & Reel S D l 150 C Operating Temperature 4 5 G D RDS(on) = 0.02 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applications,

PD - 96250 IRF7413GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A A 1 8 l N-Channel Mosfet S D l Surface Mount 2 7 S D VDSS = 30V l Available in Tape & Reel l Dynamic dv/dt Rating 3 6 S D l Fast Switching 4 5 G D l 100% RG Tested RDS(on) = 0.011 l Lead-Free l Halogen-Free Top View Description Fifth Generation HEXFETs from International

PD - 96252A IRF7416GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel Mosfet VDSS = -30V l Surface Mount 2 7 S D l Available in Tape & Reel 3 6 l Dynamic dv/dt Rating S D l Fast Switching 4 5 G D l Lead-Free RDS(on) = 0.02 l Halogen-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize

PD - 95137A IRF7416PbF l Generation V Technology HEXFET Power MOSFET l Ultra Low On-Resistance A l P-Channel Mosfet 1 8 S D l Surface Mount VDSS = -30V 2 7 S D l Available in Tape & Reel 3 6 l Dynamic dv/dt Rating S D l Fast Switching 4 5 G D RDS(on) = 0.02 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces

PD - 96249 IRF7413ZGPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Control FET for Notebook Processor 10m @VGS = 10V Power 30V 13A l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL A Converters in Computing, Networking A 1 8 S D and Telecommunication Systems 2 7 S D 3 6 S D Benefits 4 5 l Ultra-Low Gate Impedance G D l Very Low RDS(on)

SMD Type MOSFET N-Channel MOSFET IRF7413 (KRF7413) SOP-8 Features VDS (V) = 30V ID = 12 A (VGS = 10V) 1.50 0.15 RDS(ON) 11m (VGS = 10V) 1 8 S D 1 Source 5 Drain 2 7 S D 6 Drain 2 Source 3 6 7 Drain S D 3 Source 8 Drain 4 Gate 4 5 G D Top View Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V

IRF7416TRPBF www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6

IRF7413TRPBF www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

IRF7410TR www.VBsemi.tw P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET 0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC 0.0100 at VGS = - 1.8 V - 13 APPLICATIONS Load Switch Battery Switch S