IRF741FI Datasheet. Specs and Replacement

Type Designator: IRF741FI  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: ISOWATT220

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IRF741FI substitution

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IRF741FI datasheet

 8.1. Size:269K  1
irf7416qpbf.pdf pdf_icon

IRF741FI

PD - 96124 IRF7416QPbF HEXFET Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D l P Channel MOSFET VDSS = -30V 2 7 S D l Surface Mount 3 6 l Available in Tape & Reel S D l 150 C Operating Temperature 4 5 G D RDS(on) = 0.02 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applications, ... See More ⇒

 8.2. Size:123K  international rectifier
irf7413.pdf pdf_icon

IRF741FI

PD- 91330F IRF7413 SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max(mW) ID Applications l High frequency DC-DC converters 30V 11@VGS = 10V 12A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S Effective COSS to Simplify Design, (See D App. Note AN1001) 4 5 G D l Fully Characterized Avalan... See More ⇒

 8.3. Size:258K  international rectifier
irf7413pbf.pdf pdf_icon

IRF741FI

PD - 95017C IRF7413PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A A 1 8 l N-Channel Mosfet S D l Surface Mount 2 7 S D VDSS = 30V l Available in Tape & Reel l Dynamic dv/dt Rating 3 6 S D l Fast Switching 4 5 G D l 100% RG Tested RDS(on) = 0.011 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier util... See More ⇒

 8.4. Size:257K  international rectifier
irf7413qpbf.pdf pdf_icon

IRF741FI

PD - 96112 IRF7413QPbF HEXFET Power MOSFET A l Advanced Process Technology A 1 8 S D l Ultra Low On-Resistance 2 7 l N Channel MOSFET S D VDSS = 30V l Surface Mount 3 6 S D l Available in Tape & Reel 4 5 l 150 C Operating Temperature G D RDS(on) = 0.011 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applications,... See More ⇒

Detailed specifications: IFR623, IRF623FI, IRF721FI, IRF722FI, IRF723FI, IRF731FI, IRF732FI, IRF733FI, 4435, IRF742FI, IRF743FI, IRF821FI, IRF823FI, IRF832FI, IRF833FI, IRF842FI, IRF843FI

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