FDS6990A Todos los transistores

 

FDS6990A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS6990A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 12 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: SO8

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FDS6990A Datasheet (PDF)

 ..1. Size:119K  fairchild semi
fds6990a.pdf

FDS6990A FDS6990A

June 2003FDS6990ADual N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 7.5 A, 30 V. RDS(ON) = 18 m @ VGS = 10 Vusing Fairchild Semiconductors advancedRDS(ON) = 23 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Fast switc

 ..2. Size:234K  onsemi
fds6990a.pdf

FDS6990A FDS6990A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:711K  fairchild semi
fds6990as.pdf

FDS6990A FDS6990A

MMarch 2010FDS6990ASDual 30V N-Channel PowerTrench SyncFETFeatures General Description 7.5 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFETRDS(ON) = 28 m @ VGS = 4.5 V and two Schottky diodes in synchronous DC:DC power sup-plies. This 30V MOSFET is designed to maximize power con- Includes SyncFET Schottky diode versi

 0.2. Size:711K  onsemi
fds6990as.pdf

FDS6990A FDS6990A

MMarch 2010FDS6990ASDual 30V N-Channel PowerTrench SyncFETFeatures General Description 7.5 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFETRDS(ON) = 28 m @ VGS = 4.5 V and two Schottky diodes in synchronous DC:DC power sup-plies. This 30V MOSFET is designed to maximize power con- Includes SyncFET Schottky diode versi

 8.1. Size:294K  fairchild semi
fds6994s.pdf

FDS6990A FDS6990A

October 2006 FDS6994S Dual Notebook Power Supply N-Channel PowerTrench SyncFet General Description Features The FDS6994S is designed to replace two single SO-8 Q2: Optimized to minimize conduction losses MOSFETs and Schottky diode in synchronous DC:DC Includes SyncFET Schottky body diode power supplies that provide various peripheral voltages 8.2A, 30V

Otros transistores... FDS6875 , FDS6890A , FDS6912 , FDS6912A , FDS6930A , FDS6961A , FDS6975 , FDS6982 , IRFB3607 , FDS8433A , FDS8926A , FDS8934A , FDS8936A , FDS8947A , FDS9412 , FDS9435A , FDS9933A .

 

 
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