All MOSFET. FDS6990A Datasheet

 

FDS6990A Datasheet and Replacement


   Type Designator: FDS6990A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SO8
 

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FDS6990A Datasheet (PDF)

 ..1. Size:119K  fairchild semi
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FDS6990A

June 2003FDS6990ADual N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 7.5 A, 30 V. RDS(ON) = 18 m @ VGS = 10 Vusing Fairchild Semiconductors advancedRDS(ON) = 23 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Fast switc

 ..2. Size:234K  onsemi
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FDS6990A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:711K  fairchild semi
fds6990as.pdf pdf_icon

FDS6990A

MMarch 2010FDS6990ASDual 30V N-Channel PowerTrench SyncFETFeatures General Description 7.5 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFETRDS(ON) = 28 m @ VGS = 4.5 V and two Schottky diodes in synchronous DC:DC power sup-plies. This 30V MOSFET is designed to maximize power con- Includes SyncFET Schottky diode versi

 0.2. Size:711K  onsemi
fds6990as.pdf pdf_icon

FDS6990A

MMarch 2010FDS6990ASDual 30V N-Channel PowerTrench SyncFETFeatures General Description 7.5 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFETRDS(ON) = 28 m @ VGS = 4.5 V and two Schottky diodes in synchronous DC:DC power sup-plies. This 30V MOSFET is designed to maximize power con- Includes SyncFET Schottky diode versi

Datasheet: FDS6875 , FDS6890A , FDS6912 , FDS6912A , FDS6930A , FDS6961A , FDS6975 , FDS6982 , CS150N03A8 , FDS8433A , FDS8926A , FDS8934A , FDS8936A , FDS8947A , FDS9412 , FDS9435A , FDS9933A .

History: HUFA75321S3S | IRFBE30

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