FDS6990A. Аналоги и основные параметры

Наименование производителя: FDS6990A

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm

Тип корпуса: SO8

Аналог (замена) для FDS6990A

- подборⓘ MOSFET транзистора по параметрам

 

FDS6990A даташит

 ..1. Size:119K  fairchild semi
 fds6990a.pdf pdf_icon

FDS6990A

June 2003 FDS6990A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 7.5 A, 30 V. RDS(ON) = 18 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 23 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Fast switc

 ..2. Size:234K  onsemi
 fds6990a.pdf pdf_icon

FDS6990A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:711K  fairchild semi
 fds6990as.pdf pdf_icon

FDS6990A

M March 2010 FDS6990AS Dual 30V N-Channel PowerTrench SyncFET Features General Description 7.5 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFET RDS(ON) = 28 m @ VGS = 4.5 V and two Schottky diodes in synchronous DC DC power sup- plies. This 30V MOSFET is designed to maximize power con- Includes SyncFET Schottky diode versi

 0.2. Size:711K  onsemi
 fds6990as.pdf pdf_icon

FDS6990A

M March 2010 FDS6990AS Dual 30V N-Channel PowerTrench SyncFET Features General Description 7.5 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFET RDS(ON) = 28 m @ VGS = 4.5 V and two Schottky diodes in synchronous DC DC power sup- plies. This 30V MOSFET is designed to maximize power con- Includes SyncFET Schottky diode versi

ПОКАЗАТЬ ЕЩЁ

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