FDS8936A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS8936A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: SO8

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FDS8936A datasheet

 8.1. Size:285K  fairchild semi
 fds8934a.pdf pdf_icon

FDS8936A

May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect -4 A , -20 V, RDS(ON) = 0.055 @ VGS = -4.5 V, transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.072 @ VGS = -2.5 V. cell density, DMOS technology. This very high density process is especially tailor

 8.2. Size:219K  fairchild semi
 fds8935.pdf pdf_icon

FDS8936A

November 2010 FDS8935 Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 m Features General Description Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 247 m at VGS = -4.5 V, ID = -1.9 A been optimized for rDS(on), switching performance and ruggedn

 8.3. Size:253K  onsemi
 fds8935.pdf pdf_icon

FDS8936A

FDS8935 Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 m General Description This P-channel MOSFET is produced using ON Features Semiconductor s advanced PowerTrench process that has Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 247 m at VGS = -4.5 V, ID = -1.9 A High performanc

MOSTRAR MÁS

Otros transistores... FDS6930A, FDS6961A, FDS6975, FDS6982, FDS6990A, FDS8433A, FDS8926A, FDS8934A, NCEP15T14, FDS8947A, FDS9412, FDS9435A, FDS9933A, FDS9936A, FDT439N, FDT457N, FDT459N