FDS8936A Datasheet and Replacement. Cross Reference Search

FDS8936A Datasheet (PDF)

8.1. Size:285K fairchild semi
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May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description FeaturesSO-8 P-Channel enhancement mode power field effect-4 A , -20 V, RDS(ON) = 0.055 @ VGS = -4.5 V,transistors are produced using Fairchild's proprietary, highRDS(ON) = 0.072 @ VGS = -2.5 V. cell density, DMOS technology. This very high densityprocess is especially tailor

8.2. Size:219K fairchild semi
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November 2010FDS8935Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 mFeatures General Description Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 247 m at VGS = -4.5 V, ID = -1.9 A been optimized for rDS(on), switching performance and ruggedn

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FDS8935Dual P-Channel PowerTrench MOSFET-80 V, -2.1 A, 183 m General Description This P-channel MOSFET is produced using ON FeaturesSemiconductors advanced PowerTrench process that has Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 Abeen optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 247 m at VGS = -4.5 V, ID = -1.9 A High performanc

Datasheet: FDS6930A , FDS6961A , FDS6975 , FDS6982 , FDS6990A , FDS8433A , FDS8926A , FDS8934A , STP80NF70 , FDS8947A , FDS9412 , FDS9435A , FDS9933A , FDS9936A , FDT439N , FDT457N , FDT459N .