FDS8936A
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS8936A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package:
SO8
FDS8936A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS8936A
Datasheet (PDF)
8.1. Size:285K fairchild semi
fds8934a.pdf 
May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description FeaturesSO-8 P-Channel enhancement mode power field effect-4 A , -20 V, RDS(ON) = 0.055 @ VGS = -4.5 V,transistors are produced using Fairchild's proprietary, highRDS(ON) = 0.072 @ VGS = -2.5 V. cell density, DMOS technology. This very high densityprocess is especially tailor
8.2. Size:219K fairchild semi
fds8935.pdf
November 2010FDS8935Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 mFeatures General Description Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 247 m at VGS = -4.5 V, ID = -1.9 A been optimized for rDS(on), switching performance and ruggedn
8.3. Size:253K onsemi
fds8935.pdf
FDS8935Dual P-Channel PowerTrench MOSFET-80 V, -2.1 A, 183 m General Description This P-channel MOSFET is produced using ON FeaturesSemiconductors advanced PowerTrench process that has Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 Abeen optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 247 m at VGS = -4.5 V, ID = -1.9 A High performanc
Datasheet: FDS6930A
, FDS6961A
, FDS6975
, FDS6982
, FDS6990A
, FDS8433A
, FDS8926A
, FDS8934A
, 4N60
, FDS8947A
, FDS9412
, FDS9435A
, FDS9933A
, FDS9936A
, FDT439N
, FDT457N
, FDT459N
.
