FDS8936A - описание и поиск аналогов

 8.1. Size:285K  fairchild semi
 fds8934a.pdf 

May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect -4 A , -20 V, RDS(ON) = 0.055 @ VGS = -4.5 V, transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.072 @ VGS = -2.5 V. cell density, DMOS technology. This very high density process is especially tailor

 8.2. Size:219K  fairchild semi
 fds8935.pdf 

November 2010 FDS8935 Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 m Features General Description Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 247 m at VGS = -4.5 V, ID = -1.9 A been optimized for rDS(on), switching performance and ruggedn

 8.3. Size:253K  onsemi
 fds8935.pdf 

FDS8935 Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 m General Description This P-channel MOSFET is produced using ON Features Semiconductor s advanced PowerTrench process that has Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 247 m at VGS = -4.5 V, ID = -1.9 A High performanc