FDS8936A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDS8936A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Максимально допустимый постоянный ток стока |Id|: 6 A
Максимальная температура канала (Tj): 150 °C
Сопротивление сток-исток открытого транзистора (Rds): 0.028 Ohm
Тип корпуса: SO8
FDS8936A Datasheet (PDF)
fds8934a.pdf
May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description FeaturesSO-8 P-Channel enhancement mode power field effect-4 A , -20 V, RDS(ON) = 0.055 @ VGS = -4.5 V,transistors are produced using Fairchild's proprietary, highRDS(ON) = 0.072 @ VGS = -2.5 V. cell density, DMOS technology. This very high densityprocess is especially tailor
fds8935.pdf
November 2010FDS8935Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 mFeatures General Description Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 247 m at VGS = -4.5 V, ID = -1.9 A been optimized for rDS(on), switching performance and ruggedn
fds8935.pdf
FDS8935Dual P-Channel PowerTrench MOSFET-80 V, -2.1 A, 183 m General Description This P-channel MOSFET is produced using ON FeaturesSemiconductors advanced PowerTrench process that has Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 Abeen optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 247 m at VGS = -4.5 V, ID = -1.9 A High performanc
Другие MOSFET... FDS6930A , FDS6961A , FDS6975 , FDS6982 , FDS6990A , FDS8433A , FDS8926A , FDS8934A , AO4407 , FDS8947A , FDS9412 , FDS9435A , FDS9933A , FDS9936A , FDT439N , FDT457N , FDT459N .
