FDT459N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDT459N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: SOT223

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FDT459N datasheet

 ..1. Size:95K  fairchild semi
 fdt459n.pdf pdf_icon

FDT459N

March 1998 FDT459N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 6.5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.055 @ VGS = 4.5 V. cell density, DMOS technology. This very high density process is especially tailored to mini

 9.1. Size:103K  fairchild semi
 fdt457n.pdf pdf_icon

FDT459N

August 1998 FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.06 @ VGS = 10 V transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.090 @ VGS = 4.5 V. cell density, DMOS technology. This very high density process is especially tailored to mini

 9.2. Size:99K  fairchild semi
 fdt458p.pdf pdf_icon

FDT459N

June 2001 FDT458P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 3.4 A, 30 V. R = 130 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 200 m @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers, and battery chargers. Fast

 9.3. Size:196K  onsemi
 fdt457n.pdf pdf_icon

FDT459N

FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.06 @ VGS = 10 V transistors are produced using ON Semiconductor's RDS(ON) = 0.090 @ VGS = 4.5 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize

MOSTRAR MÁS

Otros transistores... FDS8936A, FDS8947A, FDS9412, FDS9435A, FDS9933A, FDS9936A, FDT439N, FDT457N, IRFP250, FDV301N, FDV302P, FDV303N, FDV304P, FK10KM-10, FK10KM-12, FK10KM-9, FK10SM-10