FDT459N Specs and Replacement

Type Designator: FDT459N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOT223

FDT459N substitution

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FDT459N datasheet

 ..1. Size:95K  fairchild semi
 fdt459n.pdf pdf_icon

FDT459N

March 1998 FDT459N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 6.5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.055 @ VGS = 4.5 V. cell density, DMOS technology. This very high density process is especially tailored to mini... See More ⇒

 9.1. Size:103K  fairchild semi
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FDT459N

August 1998 FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.06 @ VGS = 10 V transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.090 @ VGS = 4.5 V. cell density, DMOS technology. This very high density process is especially tailored to mini... See More ⇒

 9.2. Size:99K  fairchild semi
 fdt458p.pdf pdf_icon

FDT459N

June 2001 FDT458P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 3.4 A, 30 V. R = 130 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 200 m @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers, and battery chargers. Fast... See More ⇒

 9.3. Size:196K  onsemi
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FDT459N

FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.06 @ VGS = 10 V transistors are produced using ON Semiconductor's RDS(ON) = 0.090 @ VGS = 4.5 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize ... See More ⇒

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Detailed specifications: FDS8936A, FDS8947A, FDS9412, FDS9435A, FDS9933A, FDS9936A, FDT439N, FDT457N, IRFP250, FDV301N, FDV302P, FDV303N, FDV304P, FK10KM-10, FK10KM-12, FK10KM-9, FK10SM-10

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.