FDT459N. Аналоги и основные параметры

Наименование производителя: FDT459N

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm

Тип корпуса: SOT223

Аналог (замена) для FDT459N

- подборⓘ MOSFET транзистора по параметрам

 

FDT459N даташит

 ..1. Size:95K  fairchild semi
 fdt459n.pdf pdf_icon

FDT459N

March 1998 FDT459N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 6.5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.055 @ VGS = 4.5 V. cell density, DMOS technology. This very high density process is especially tailored to mini

 9.1. Size:103K  fairchild semi
 fdt457n.pdf pdf_icon

FDT459N

August 1998 FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.06 @ VGS = 10 V transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.090 @ VGS = 4.5 V. cell density, DMOS technology. This very high density process is especially tailored to mini

 9.2. Size:99K  fairchild semi
 fdt458p.pdf pdf_icon

FDT459N

June 2001 FDT458P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 3.4 A, 30 V. R = 130 m @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 200 m @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers, and battery chargers. Fast

 9.3. Size:196K  onsemi
 fdt457n.pdf pdf_icon

FDT459N

FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.06 @ VGS = 10 V transistors are produced using ON Semiconductor's RDS(ON) = 0.090 @ VGS = 4.5 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize

ПОКАЗАТЬ ЕЩЁ

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