AP01N60P Todos los transistores

 

AP01N60P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP01N60P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 39 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

AP01N60P Datasheet (PDF)

 ..1. Size:60K  ape
ap01n60p.pdf pdf_icon

AP01N60P

AP01N60PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Dynamic dv/dt Rating BVDSS 600V Repetitive Avalanche Rated RDS(ON) 8 Fast Switching ID 1.6A Simple Drive Requirement GDTO-220S RoHS CompliantDescriptionDThe TO-220 package is universally preferred for all commercial-industrial applications. The de

 7.1. Size:98K  ape
ap01n60hj-hf.pdf pdf_icon

AP01N60P

AP01N60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount ap

 7.2. Size:196K  ape
ap01n60j.pdf pdf_icon

AP01N60P

AP01N60J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSDescriptionGDS TO-251(J)AP01N60 series are from Advanced Power innovated design andsilicon process technology

 9.1. Size:56K  ape
ap01n40g-hf.pdf pdf_icon

AP01N60P

AP01N40G-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400VD 100% Avalanche Test RDS(ON) 16 Fast Switching Performance ID 0.2AG Simple Drive RequirementSDDescriptionAdvanced Power MOSFETs from APEC provide the designer withSthe best combination of fast switching, ruggedized device

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: CS740A0H | 2SK4197FS | SSM9971GM | TSM4N80CZ | CS4N80P | IRFS640B | JFFM13N65D

 

 
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