AP01N60P
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP01N60P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 39
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 1.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.7
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 25
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8
Ohm
Package:
TO220
AP01N60P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP01N60P
Datasheet (PDF)
..1. Size:60K ape
ap01n60p.pdf 
AP01N60PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Dynamic dv/dt Rating BVDSS 600V Repetitive Avalanche Rated RDS(ON) 8 Fast Switching ID 1.6A Simple Drive Requirement GDTO-220S RoHS CompliantDescriptionDThe TO-220 package is universally preferred for all commercial-industrial applications. The de
7.1. Size:98K ape
ap01n60hj-hf.pdf
AP01N60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount ap
7.2. Size:196K ape
ap01n60j.pdf
AP01N60J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSDescriptionGDS TO-251(J)AP01N60 series are from Advanced Power innovated design andsilicon process technology
9.1. Size:56K ape
ap01n40g-hf.pdf
AP01N40G-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400VD 100% Avalanche Test RDS(ON) 16 Fast Switching Performance ID 0.2AG Simple Drive RequirementSDDescriptionAdvanced Power MOSFETs from APEC provide the designer withSthe best combination of fast switching, ruggedized device
9.2. Size:90K ape
ap01n15gk-hf.pdf
AP01N15GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 2.6 Fast Switching Characteristic ID 700mAG Halogen Free & RoHS Compliant ProductSDDescriptionSAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switc
9.3. Size:57K ape
ap01n40hj-hf.pdf
AP01N40H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400VD 100% Avalanche Rated RDS(ON) 16 Fast Switching Performance ID 0.5AG Simple Drive RequirementS RoHS Compliant & Halogen-FreeDescriptionGDAP01N40 series are from Advanced Power innovated design andTO-252(H)Ssili
9.4. Size:65K ape
ap01n40j.pdf
AP01N40JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400VD 100% Avalanche Rated RDS(ON) 16 Fast Switching Performance ID 0.5AG Simple Drive RequirementSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device desig
9.5. Size:583K ncepower
nceap01nd35ag.pdf
http://www.ncepower.com NCEAP01ND35AGNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP01ND35AG uses Super Trench technology that is V =100V,I =35ADS Duniquely optimized to provide the most efficient high frequency R =24m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =27m (typical) @ V =4.5VDS(ON) GSlo
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