AP01N60P PDF and Equivalents Search

 

AP01N60P Specs and Replacement

Type Designator: AP01N60P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO220

AP01N60P substitution

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AP01N60P datasheet

 ..1. Size:60K  ape
ap01n60p.pdf pdf_icon

AP01N60P

AP01N60P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Dynamic dv/dt Rating BVDSS 600V Repetitive Avalanche Rated RDS(ON) 8 Fast Switching ID 1.6A Simple Drive Requirement G D TO-220 S RoHS Compliant Description D The TO-220 package is universally preferred for all commercial- industrial applications. The de... See More ⇒

 7.1. Size:98K  ape
ap01n60hj-hf.pdf pdf_icon

AP01N60P

AP01N60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6A G RoHS Compliant & Halogen-Free S Description G The TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount ap... See More ⇒

 7.2. Size:196K  ape
ap01n60j.pdf pdf_icon

AP01N60P

AP01N60J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6A G RoHS Compliant & Halogen-Free S Description G D S TO-251(J) AP01N60 series are from Advanced Power innovated design and silicon process technology ... See More ⇒

 9.1. Size:56K  ape
ap01n40g-hf.pdf pdf_icon

AP01N60P

AP01N40G-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400V D 100% Avalanche Test RDS(ON) 16 Fast Switching Performance ID 0.2A G Simple Drive Requirement S D Description Advanced Power MOSFETs from APEC provide the designer with S the best combination of fast switching, ruggedized device... See More ⇒

Detailed specifications: 2SK3108, 2SK3109, 2SK3109-S, 2SK3109-ZJ, 2SK3110, 2SK3111, 2SK3111-S, 2SK3111-ZJ, IRF1407, AP0203GMT-HF, AP02N40H-HF, AP02N40I-HF, AP02N40J-HF, AP02N40K-HF, AP02N40P, AP02N60H, AP02N60H-H

Keywords - AP01N60P MOSFET specs

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