AP01N60P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP01N60P
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 39 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 1.6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 7.7 nC
Время нарастания (tr): 5 ns
Выходная емкость (Cd): 25 pf
Сопротивление сток-исток открытого транзистора (Rds): 8 Ohm
Тип корпуса: TO220
AP01N60P Datasheet (PDF)
ap01n60p.pdf
AP01N60PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Dynamic dv/dt Rating BVDSS 600V Repetitive Avalanche Rated RDS(ON) 8 Fast Switching ID 1.6A Simple Drive Requirement GDTO-220S RoHS CompliantDescriptionDThe TO-220 package is universally preferred for all commercial-industrial applications. The de
ap01n60hj-hf.pdf
AP01N60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount ap
ap01n60j.pdf
AP01N60J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSDescriptionGDS TO-251(J)AP01N60 series are from Advanced Power innovated design andsilicon process technology
ap01n40g-hf.pdf
AP01N40G-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400VD 100% Avalanche Test RDS(ON) 16 Fast Switching Performance ID 0.2AG Simple Drive RequirementSDDescriptionAdvanced Power MOSFETs from APEC provide the designer withSthe best combination of fast switching, ruggedized device
ap01n15gk-hf.pdf
AP01N15GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 2.6 Fast Switching Characteristic ID 700mAG Halogen Free & RoHS Compliant ProductSDDescriptionSAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switc
ap01n40hj-hf.pdf
AP01N40H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400VD 100% Avalanche Rated RDS(ON) 16 Fast Switching Performance ID 0.5AG Simple Drive RequirementS RoHS Compliant & Halogen-FreeDescriptionGDAP01N40 series are from Advanced Power innovated design andTO-252(H)Ssili
ap01n40j.pdf
AP01N40JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400VD 100% Avalanche Rated RDS(ON) 16 Fast Switching Performance ID 0.5AG Simple Drive RequirementSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device desig
nceap01nd35ag.pdf
http://www.ncepower.com NCEAP01ND35AGNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP01ND35AG uses Super Trench technology that is V =100V,I =35ADS Duniquely optimized to provide the most efficient high frequency R =24m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =27m (typical) @ V =4.5VDS(ON) GSlo
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