AP01N60P. Аналоги и основные параметры
Наименование производителя: AP01N60P
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 39 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 25 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 8 Ohm
Тип корпуса: TO220
Аналог (замена) для AP01N60P
- подборⓘ MOSFET транзистора по параметрам
AP01N60P даташит
ap01n60p.pdf
AP01N60P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Dynamic dv/dt Rating BVDSS 600V Repetitive Avalanche Rated RDS(ON) 8 Fast Switching ID 1.6A Simple Drive Requirement G D TO-220 S RoHS Compliant Description D The TO-220 package is universally preferred for all commercial- industrial applications. The de
ap01n60hj-hf.pdf
AP01N60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6A G RoHS Compliant & Halogen-Free S Description G The TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount ap
ap01n60j.pdf
AP01N60J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6A G RoHS Compliant & Halogen-Free S Description G D S TO-251(J) AP01N60 series are from Advanced Power innovated design and silicon process technology
ap01n40g-hf.pdf
AP01N40G-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400V D 100% Avalanche Test RDS(ON) 16 Fast Switching Performance ID 0.2A G Simple Drive Requirement S D Description Advanced Power MOSFETs from APEC provide the designer with S the best combination of fast switching, ruggedized device
Другие MOSFET... 2SK3108 , 2SK3109 , 2SK3109-S , 2SK3109-ZJ , 2SK3110 , 2SK3111 , 2SK3111-S , 2SK3111-ZJ , IRF1407 , AP0203GMT-HF , AP02N40H-HF , AP02N40I-HF , AP02N40J-HF , AP02N40K-HF , AP02N40P , AP02N60H , AP02N60H-H .
History: JCS3205CH | 4N65L-TF1-T | HCFL65R210 | MEE7630-G | AOV11S60 | JCS10N65CT | IPI111N15N3
History: JCS3205CH | 4N65L-TF1-T | HCFL65R210 | MEE7630-G | AOV11S60 | JCS10N65CT | IPI111N15N3
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Список транзисторов
Обновления
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