AP0203GMT-HF Todos los transistores

 

AP0203GMT-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP0203GMT-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 155 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11.5 nS

Cossⓘ - Capacitancia de salida: 820 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm

Encapsulados: PMPAK5X6

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AP0203GMT-HF datasheet

 ..1. Size:95K  ape
 ap0203gmt-hf.pdf pdf_icon

AP0203GMT-HF

AP0203GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155A G RoHS Compliant & Halogen-Free S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchin

 4.1. Size:311K  ape
 ap0203gmt-l.pdf pdf_icon

AP0203GMT-HF

AP0203GMT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155A G RoHS Compliant & Halogen-Free S D D D Description D AP0203 series are from Advanced Power innovated design and silicon process technology to achieve

 5.1. Size:192K  ape
 ap0203gmt.pdf pdf_icon

AP0203GMT-HF

AP0203GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155A G RoHS Compliant & Halogen-Free S D D Description D AP0203 series are from Advanced Power innovated design and D silicon process technology to achieve

 9.1. Size:747K  ncepower
 nceap020n10ll.pdf pdf_icon

AP0203GMT-HF

NCEAP020N10LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g

MOSTRAR MÁS

Otros transistores... 2SK3109 , 2SK3109-S , 2SK3109-ZJ , 2SK3110 , 2SK3111 , 2SK3111-S , 2SK3111-ZJ , AP01N60P , 2SK3568 , AP02N40H-HF , AP02N40I-HF , AP02N40J-HF , AP02N40K-HF , AP02N40P , AP02N60H , AP02N60H-H , AP02N60I .

History: HCD80R1K2 | JCS10N60BT | IRF7342QPBF | SWB075R06ET | AUIRF7759L2TR | BF999 | SUD19P06-60L

 

 

 

 

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