Справочник MOSFET. AP0203GMT-HF

 

AP0203GMT-HF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP0203GMT-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 83.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 155 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 11.5 ns
   Cossⓘ - Выходная емкость: 820 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
   Тип корпуса: PMPAK5X6
 

 Аналог (замена) для AP0203GMT-HF

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP0203GMT-HF Datasheet (PDF)

 ..1. Size:95K  ape
 ap0203gmt-hf.pdf pdf_icon

AP0203GMT-HF

AP0203GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switchin

 4.1. Size:311K  ape
 ap0203gmt-l.pdf pdf_icon

AP0203GMT-HF

AP0203GMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAP0203 series are from Advanced Power innovated design andsilicon process technology to achieve

 5.1. Size:192K  ape
 ap0203gmt.pdf pdf_icon

AP0203GMT-HF

AP0203GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP0203 series are from Advanced Power innovated design andDsilicon process technology to achieve

 9.1. Size:747K  ncepower
 nceap020n10ll.pdf pdf_icon

AP0203GMT-HF

NCEAP020N10LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent g

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... 2SK3109 , 2SK3109-S , 2SK3109-ZJ , 2SK3110 , 2SK3111 , 2SK3111-S , 2SK3111-ZJ , AP01N60P , 5N65 , AP02N40H-HF , AP02N40I-HF , AP02N40J-HF , AP02N40K-HF , AP02N40P , AP02N60H , AP02N60H-H , AP02N60I .

History: FXN4625F | RJK005N03FRA | NTDV20P06L

 

 
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