All MOSFET. AP0203GMT-HF Datasheet

 

AP0203GMT-HF Datasheet and Replacement


   Type Designator: AP0203GMT-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 155 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11.5 nS
   Cossⓘ - Output Capacitance: 820 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: PMPAK5X6
 

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AP0203GMT-HF Datasheet (PDF)

 ..1. Size:95K  ape
 ap0203gmt-hf.pdf pdf_icon

AP0203GMT-HF

AP0203GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switchin

 4.1. Size:311K  ape
 ap0203gmt-l.pdf pdf_icon

AP0203GMT-HF

AP0203GMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAP0203 series are from Advanced Power innovated design andsilicon process technology to achieve

 5.1. Size:192K  ape
 ap0203gmt.pdf pdf_icon

AP0203GMT-HF

AP0203GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP0203 series are from Advanced Power innovated design andDsilicon process technology to achieve

 9.1. Size:747K  ncepower
 nceap020n10ll.pdf pdf_icon

AP0203GMT-HF

NCEAP020N10LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent g

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Datasheet: 2SK3109 , 2SK3109-S , 2SK3109-ZJ , 2SK3110 , 2SK3111 , 2SK3111-S , 2SK3111-ZJ , AP01N60P , 2SK3568 , AP02N40H-HF , AP02N40I-HF , AP02N40J-HF , AP02N40K-HF , AP02N40P , AP02N60H , AP02N60H-H , AP02N60I .

History: SRC65R082B | IRLR8103 | R6047ENZ1 | LNH045R140 | R6046FNZ1 | R8010ANX

Keywords - AP0203GMT-HF MOSFET datasheet

 AP0203GMT-HF cross reference
 AP0203GMT-HF equivalent finder
 AP0203GMT-HF lookup
 AP0203GMT-HF substitution
 AP0203GMT-HF replacement

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