AP02N70EI-HF Todos los transistores

 

AP02N70EI-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP02N70EI-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 30 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm

Encapsulados: TO220F

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AP02N70EI-HF datasheet

 ..1. Size:55K  ape
 ap02n70ei-hf.pdf pdf_icon

AP02N70EI-HF

AP02N70EI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D ESD Improved Capability RDS(ON) 7 G Simple Drive Requirement ID 1.6A RoHS Compliant & Halogen-Free S Description AP02N70 from APEC provide the designer with the best G D combination of fast switching , low on-resistance and

 6.1. Size:58K  ape
 ap02n70ej-hf.pdf pdf_icon

AP02N70EI-HF

AP02N70EJ-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D ESD Improved Capability RDS(ON) 7 G Simple Drive Requirement ID 1.6A RoHS Compliant S G Description D S TO-251(J) AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and c

 6.2. Size:108K  ape
 ap02n70ej.pdf pdf_icon

AP02N70EI-HF

AP02N70EJ RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D ESD Improved Capability RDS(ON) 7 G Simple Drive Requirement ID 1.6A S G Description D TO-251(J) S AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness. Th

 9.1. Size:197K  ape
 ap02n90h.pdf pdf_icon

AP02N70EI-HF

AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V D Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon G process technology to achieve the

MOSTRAR MÁS

Otros transistores... AP02N60H , AP02N60H-H , AP02N60I , AP02N60I-A-HF , AP02N60J , AP02N60J-H , AP02N60P-A-HF , AP02N60T-H-HF , P60NF06 , AP02N70EJ , AP02N90H-HF , AP02N90I , AP02N90J-HF , AP02N90P-HF , AP03N40AH-HF , AP03N40AI-HF , AP03N40AJ-HF .

History: SW4N70K | HD1H15A

 

 

 

 

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