AP02N70EI-HF Todos los transistores

 

AP02N70EI-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP02N70EI-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

AP02N70EI-HF Datasheet (PDF)

 ..1. Size:55K  ape
ap02n70ei-hf.pdf pdf_icon

AP02N70EI-HF

AP02N70EI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD ESD Improved Capability RDS(ON) 7G Simple Drive Requirement ID 1.6A RoHS Compliant & Halogen-FreeSDescriptionAP02N70 from APEC provide the designer with the bestGDcombination of fast switching , low on-resistance and

 6.1. Size:58K  ape
ap02n70ej-hf.pdf pdf_icon

AP02N70EI-HF

AP02N70EJ-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD ESD Improved Capability RDS(ON) 7G Simple Drive Requirement ID 1.6A RoHS CompliantSGDescriptionDSTO-251(J)AP02N70 from APEC provide the designer with the best combination offast switching , low on-resistance and c

 6.2. Size:108K  ape
ap02n70ej.pdf pdf_icon

AP02N70EI-HF

AP02N70EJRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD ESD Improved Capability RDS(ON) 7G Simple Drive Requirement ID 1.6ASGDescription DTO-251(J)SAP02N70 from APEC provide the designer with the best combinationof fast switching , low on-resistance and cost-effectiveness.Th

 9.1. Size:197K  ape
ap02n90h.pdf pdf_icon

AP02N70EI-HF

AP02N90H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900VD Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGSDescriptionAP02N90 series are from Advanced Power innovated design and siliconGprocess technology to achieve the

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History: CRJD390N65GC | SFF40N30MUB | HFS4N50 | AFP9407 | BSC028N06LS3G | UT50N03 | SM7A22NSU

 

 
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