AP02N70EI-HF PDF and Equivalents Search

 

AP02N70EI-HF Specs and Replacement

Type Designator: AP02N70EI-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm

Package: TO220F

AP02N70EI-HF substitution

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AP02N70EI-HF datasheet

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AP02N70EI-HF

AP02N70EI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D ESD Improved Capability RDS(ON) 7 G Simple Drive Requirement ID 1.6A RoHS Compliant & Halogen-Free S Description AP02N70 from APEC provide the designer with the best G D combination of fast switching , low on-resistance and ... See More ⇒

 6.1. Size:58K  ape
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AP02N70EI-HF

AP02N70EJ-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D ESD Improved Capability RDS(ON) 7 G Simple Drive Requirement ID 1.6A RoHS Compliant S G Description D S TO-251(J) AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and c... See More ⇒

 6.2. Size:108K  ape
ap02n70ej.pdf pdf_icon

AP02N70EI-HF

AP02N70EJ RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D ESD Improved Capability RDS(ON) 7 G Simple Drive Requirement ID 1.6A S G Description D TO-251(J) S AP02N70 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness. Th... See More ⇒

 9.1. Size:197K  ape
ap02n90h.pdf pdf_icon

AP02N70EI-HF

AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V D Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon G process technology to achieve the ... See More ⇒

Detailed specifications: AP02N60H, AP02N60H-H, AP02N60I, AP02N60I-A-HF, AP02N60J, AP02N60J-H, AP02N60P-A-HF, AP02N60T-H-HF, P60NF06, AP02N70EJ, AP02N90H-HF, AP02N90I, AP02N90J-HF, AP02N90P-HF, AP03N40AH-HF, AP03N40AI-HF, AP03N40AJ-HF

Keywords - AP02N70EI-HF MOSFET specs

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