AP04N70BI Todos los transistores

 

AP04N70BI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP04N70BI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.3 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
   Paquete / Cubierta: TO220F
 

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AP04N70BI Datasheet (PDF)

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 ap04n70bi.pdf pdf_icon

AP04N70BI

AP04N70BIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

 0.1. Size:70K  ape
 ap04n70bi-hf.pdf pdf_icon

AP04N70BI

AP04N70BI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi

 0.2. Size:105K  ape
 ap04n70bi-a.pdf pdf_icon

AP04N70BI

AP04N70BI-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistan

 0.3. Size:71K  ape
 ap04n70bi-a-hf.pdf pdf_icon

AP04N70BI

AP04N70BI-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugge

MOSTRAR MÁS

Otros transistores... 2SK3131 , AP04N20GK-HF , AP04N60H-HF , AP04N60H-H-HF , AP04N60I , AP04N60I-A-HF , AP04N60R-A-HF , AP04N60S-H-HF , AON7408 , AP04N70BI-A , AP04N70BI-H-HF , AP04N70BP-A , AP04N70BS-H-HF , AP04N80I-HF , AP04N80R-HF , 2SK4097LS , 2SK2103 .

History: AOW29S50 | UPA1792G

 

 
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