AP04N70BI PDF and Equivalents Search

 

AP04N70BI Specs and Replacement

Type Designator: AP04N70BI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.3 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO220F

AP04N70BI substitution

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AP04N70BI datasheet

 ..1. Size:105K  ape
 ap04n70bi.pdf pdf_icon

AP04N70BI

AP04N70BI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒

 0.1. Size:70K  ape
 ap04n70bi-hf.pdf pdf_icon

AP04N70BI

AP04N70BI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi... See More ⇒

 0.2. Size:105K  ape
 ap04n70bi-a.pdf pdf_icon

AP04N70BI

AP04N70BI-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan... See More ⇒

 0.3. Size:71K  ape
 ap04n70bi-a-hf.pdf pdf_icon

AP04N70BI

AP04N70BI-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge... See More ⇒

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Detailed specifications: 2SK3131, AP04N20GK-HF, AP04N60H-HF, AP04N60H-H-HF, AP04N60I, AP04N60I-A-HF, AP04N60R-A-HF, AP04N60S-H-HF, IRFP250N, AP04N70BI-A, AP04N70BI-H-HF, AP04N70BP-A, AP04N70BS-H-HF, AP04N80I-HF, AP04N80R-HF, 2SK4097LS, 2SK2103

Keywords - AP04N70BI MOSFET specs

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