AP10N70W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP10N70W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 174 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 36 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 630 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO247

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AP10N70W Datasheet (PDF)

..1. Size:222K ape
ap10n70w.pdf

AP10N70WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10AGSDescriptionAP10N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications. The TO-3P typep

7.1. Size:189K ape
ap10n70p.pdf

AP10N70R/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10AGSDescriptionGAP10N70 series are specially designed as main switching devices forDTO-262(R)Suniversal 90~265VAC off-line AC/DC converter applicati

7.2. Size:172K ape
ap10n70s.pdf

AP10N70SRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10AGSDescriptionAP10N70S is specially designed as main switching devices for universalGD90~265VAC off-line AC/DC converter applications. TO-263 type provid

7.3. Size:189K ape
ap10n70p-a.pdf

AP10N70R/P-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10AGSDescriptionGAP10N70 series are specially designed as main switching devices forDTO-262(R)Suniversal 90~265VAC off-line AC/DC converter applica

7.4. Size:59K ape
ap10n70i-a-hf.pdf

AP10N70I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugged

7.5. Size:127K ape
ap10n70i-a.pdf

AP10N70I-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, ruggedized device design, lowDTO-22

7.6. Size:102K ape
ap10n70p r-a-lf.pdf

AP10N70R/P-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10AGSDescriptionGAP10N70 series are specially designed as main switching devices forDTO-262(R)Suniversal 90~265VAC off-line AC/DC converter applic

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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