AP10N70W - аналоги и даташиты транзистора

 

AP10N70W - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP10N70W
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 174 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 630 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: TO247

 Аналог (замена) для AP10N70W

 

AP10N70W Datasheet (PDF)

 ..1. Size:222K  ape
ap10n70w.pdfpdf_icon

AP10N70W

AP10N70W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description AP10N70 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. The TO-3P type p

 7.1. Size:189K  ape
ap10n70p.pdfpdf_icon

AP10N70W

AP10N70R/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90 265VAC off-line AC/DC converter applicati

 7.2. Size:172K  ape
ap10n70s.pdfpdf_icon

AP10N70W

AP10N70S RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description AP10N70S is specially designed as main switching devices for universal G D 90 265VAC off-line AC/DC converter applications. TO-263 type provid

 7.3. Size:189K  ape
ap10n70p-a.pdfpdf_icon

AP10N70W

AP10N70R/P-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90 265VAC off-line AC/DC converter applica

Другие MOSFET... AP1001BSQ , AP1002BMX , AP10N60W , AP10N70I-A-HF , AP10N70P , AP10N70P-A , AP10N70R-A , AP10N70S , 20N60 , AP10P10GH-HF , AP10P10GJ-HF , AP11N50I , 2SK3285 , 2SK3287 , 2SK3288 , 2SK3289 , 2SK3290 .

 

 
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