All MOSFET. AP10N70W Datasheet

 

AP10N70W MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP10N70W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 174 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 36 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO247

 AP10N70W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP10N70W Datasheet (PDF)

 ..1. Size:222K  ape
 ap10n70w.pdf

AP10N70W AP10N70W

AP10N70WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10AGSDescriptionAP10N70 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC converter applications. The TO-3P typep

 7.1. Size:189K  ape
 ap10n70p.pdf

AP10N70W AP10N70W

AP10N70R/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10AGSDescriptionGAP10N70 series are specially designed as main switching devices forDTO-262(R)Suniversal 90~265VAC off-line AC/DC converter applicati

 7.2. Size:172K  ape
 ap10n70s.pdf

AP10N70W AP10N70W

AP10N70SRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10AGSDescriptionAP10N70S is specially designed as main switching devices for universalGD90~265VAC off-line AC/DC converter applications. TO-263 type provid

 7.3. Size:189K  ape
 ap10n70p-a.pdf

AP10N70W AP10N70W

AP10N70R/P-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10AGSDescriptionGAP10N70 series are specially designed as main switching devices forDTO-262(R)Suniversal 90~265VAC off-line AC/DC converter applica

 7.4. Size:59K  ape
 ap10n70i-a-hf.pdf

AP10N70W AP10N70W

AP10N70I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugged

 7.5. Size:127K  ape
 ap10n70i-a.pdf

AP10N70W AP10N70W

AP10N70I-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, ruggedized device design, lowDTO-22

 7.6. Size:102K  ape
 ap10n70p r-a-lf.pdf

AP10N70W AP10N70W

AP10N70R/P-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10AGSDescriptionGAP10N70 series are specially designed as main switching devices forDTO-262(R)Suniversal 90~265VAC off-line AC/DC converter applic

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AOTF262L

 

 
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